是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | BGA |
包装说明: | 0.75 MM PITCH, FBGA-48 | 针数: | 48 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.71 | 风险等级: | 5.48 |
最长访问时间: | 100 ns | 其他特性: | ALSO CONFIGURABLE AS 4M X 16 |
备用内存宽度: | 8 | JESD-30 代码: | S-PBGA-B48 |
JESD-609代码: | e0 | 长度: | 9 mm |
内存密度: | 67108864 bit | 内存集成电路类型: | MASK ROM |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 48 | 字数: | 4194304 words |
字数代码: | 4000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 4MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TFBGA | 封装等效代码: | BGA48,6X8,30 |
封装形状: | SQUARE | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 1.8,3 V | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 最大待机电流: | 0.00005 A |
子类别: | MASK ROMs | 最大压摆率: | 0.06 mA |
最大供电电压 (Vsup): | 3.3 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | BALL |
端子节距: | 0.75 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 9 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K3P7U1000A-GC12 | SAMSUNG |
获取价格 |
MASK ROM, 4MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44 | |
K3P7U1000A-YC | SAMSUNG |
获取价格 |
MASK ROM | |
K3P7U1000A-YC12 | SAMSUNG |
获取价格 |
MASK ROM, 4MX16, 120ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 | |
K3P7U1000B-FC | SAMSUNG |
获取价格 |
MASK ROM | |
K3P7U1000B-FC12 | SAMSUNG |
获取价格 |
MASK ROM, 4MX16, 120ns, CMOS, PBGA48, 0.75 MM PITCH, FBGA-48 | |
K3P7U1000B-GC12 | SAMSUNG |
获取价格 |
MASK ROM, 4MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44 | |
K3P7U1000B-TC12 | SAMSUNG |
获取价格 |
MASK ROM, 4MX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | |
K3P7U1000B-YC12 | SAMSUNG |
获取价格 |
MASK ROM, 4MX16, 120ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 | |
K3P7U1000B-YC120 | SAMSUNG |
获取价格 |
MASK ROM, 4MX16, 120ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 | |
K3P7V1000 | SAMSUNG |
获取价格 |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM |