K3P7V(U)1000B-TC
CMOS MASK ROM
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
FEATURES
· Switchable organization
8,388,608 x 8(byte mode)
4,194,304 x 16(word mode)
· Fast access time
Random Access Time/Page Access Time
3.3V Operation : 100/30ns(Max.)@CL=50pF,
120/40ns(Max.)@CL=100pF
3.0V Operation : 120/40ns(Max.)@CL=100pF
8 Words / 16 Bytes page access
· Supply voltage : single +3.0V/ single +3.3V
· Current consumption
GENERAL DESCRIPTION
The K3P7V(U)1000B-TC is a fully static mask programmable
ROM fabricated using silicon gate CMOS process technology,
and is organized either as 8,388,608 x 8 bit(byte mode) or as
4,194,304 x 16 bit(word mode) depending on BHE voltage
level.(See mode selection table)
This device includes page read mode function, page read mode
allows 8 words (or 16 bytes) of data to read fast in the same
page, CE and A3 ~ A21 should not be changed.
This device operates with 3.0V or 3.3V power supply, and all
inputs and outputs are TTL compatible.
Operating : 60mA(Max.)
Standby : 50mA(Max.)
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
· Fully static operation
· All inputs and outputs TTL compatible
· Three state outputs
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The K3P7V(U)1000B-TC is packaged in a 44-TSOP2.
· Package
-. K3P7V(U)1000B-TC : 44-TSOP2-400
PIN CONFIGURATION
FUNCTIONAL BLOCK DIAGRAM
A21
X
MEMORY CELL
MATRIX
(4,194,304x16/
8,388,608x8)
A21
A18
A20
A19
A8
1
2
44
43
42
41
BUFFERS
AND
DECODER
.
.
.
.
.
.
.
.
A17
A7
3
4
A9
A6
A5
A4
A3
40 A10
5
6
A11
A12
39
38
Y
SENSE AMP.
7
BUFFERS
AND
DECODER
8
37 A13
DATA OUT
BUFFERS
A14
A2
A1
36
35
34
33
32
31
30
29
28
27
26
25
24
23
9
A3
A15
10
11
A0~A2
A-1
A0
A16
TSOP2
CE 12
BHE
VSS
.
.
.
VSS
13
OE
Q0
Q8
Q1
Q9
14
15
16
17
18
Q15/A-1
Q7
CE
Q0/Q8
Q7/Q15
CONTROL
LOGIC
OE
Q14
Q6
BHE
Q13
Q5
Q2 19
Q10 20
Q12
Q4
Pin Name
A0 - A2
Pin Function
Q3
21
22
Page Address Inputs
Address Inputs
Data Outputs
Q11
VCC
A3 - A21
Q0 - Q14
Q15 /A-1
K3P7V(U)1000B-TC
Output 15(Word mode)/
LSB Address(Byte mode)
BHE
CE
Word/Byte selection
Chip Enable
Output Enable
Power
OE
VCC
VSS
Ground