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K3S7V2000M-TC PDF预览

K3S7V2000M-TC

更新时间: 2024-02-13 03:16:26
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
27页 1079K
描述
64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM

K3S7V2000M-TC 数据手册

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K3S7V2000M-TC  
Synch. MROM  
64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM  
FEATURES  
GENERAL DESCRIPTION  
· JEDEC standard 3.3V power supply  
· LVTTL compatible with multiplexed address  
· Address: Row address: RA0 ~ RA12  
Column address: CA0 ~ CA7 (x32): CA0 ~ CA8 (x16)  
· Switchable organization  
The K3S7V2000M-TC is a synchronous high bandwidth mask  
programmable ROM fabricated with SAMSUNG¢s high perfor-  
mance CMOS process technology and is organized either as  
4,194,304 x16bit(word mode) or as 2,097,152 x32bit(double  
word mode) depending on polarity of WORD pin.(see pin func-  
tion description). Synchronous design allows precise cycle con-  
trol, with the use of system clock, I/O transactions are possible  
on every clock cycle. Range of operating frequencies, program-  
mable burst length and programmable latencies allow the same  
device to be useful for a variety of high bandwidth, high perfor-  
mance memory system applications.  
4,194,304 x 16(word mode) /  
2,097,152 x 32(double word mode)  
· All inputs are sampled at the rising edge of the system clock  
· Read Performance at memory point of view  
@33MHz 4-1-1-1 (RAS Latency=1, CAS Latency=3)  
@50MHz 5-1-1-1 (RAS Latency=1, CAS Latency=4)  
@66MHz 5-1-1-1 (RAS Latency=1, CAS Latency=4)  
@83MHz 7-1-1-1 (RAS Latency=2, CAS Latency=5)  
@100MHz 7-1-1-1 (RAS Latency=2, CAS Latency=5)  
· tSAC : 6ns  
ORDERING INFORMATION  
· Default mode by user requirement  
· MRS cycle with address key programs  
-. RAS Latency(1 & 2)  
Part NO.  
MAX Freq.  
100MHz  
83MHz  
Interface  
Package  
K3S7V2000M-TC10  
K3S7V2000M-TC12  
K3S7V2000M-TC15  
K3S7V2000M-TC20  
K3S7V2000M-TC30  
-. CAS Latency(3 ~ 6)  
-. Burst Length : 4, 8  
-. Burst Type : Sequential & Interleaved  
LVTTL  
86TSOP2  
66MHz  
· DQM for data-out masking  
· Package :86TSOP2 - 400  
50MHz  
33MHz  
FUNCTIONAL BLOCK DIAGRAM  
Q0  
Q16  
Q15  
Q31  
.
.
.
Output  
Buffer  
4M x 16 /2M x 32  
Cell Array  
CLK  
ADD  
Column Decoder  
Latency & Burst Length  
Programming Register  
LCKE  
LRAS  
CKE  
LMR  
LCAS  
Timing Register  
RAS  
CLK  
MR  
CAS  
CS  
DQM  
* Samsung Electronics reserves the right to  
change products or specification without notice.  

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