Datasheet > JS28F640J3F75B

JS28F640J3F75B

更新时间： 2024-01-18 18:35:33

品牌	Logo	应用领域
镁光 - MICRON		PC
页数	文件大小	规格书
132页	1301K
描述
Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hardening precautions for the handling and assembly of semiconductor die, wafers, packages, and PCBs.

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JS28F640J3F75B 数据手册

Micron Confidential and Proprietary

4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory

Features

Part Numbering Information

Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by

using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type,

visit www.micron.com/products. Contact the factory for devices not found.

Figure 1: Marketing Part Number Chart

MT 29F 4G 08

ES :D

Micron Technology

Design Revision (shrink)

Product Family

Production Status

29F = NAND Flash memory

Blank = Production

ES = Engineering sample

MS = Mechanical sample

QS = Qualification sample

Density

4G = 4Gb

8G = 8Gb

16G = 16Gb

Special Options

Blank

Device Width

08 = 8-bit

X = Product longevity program (PLP)

16 = 16-bit

Operating Temperature Range

Blank = Commercial (0°C to +70°C)

IT = Industrial (–40°C to +85°C)

Level

A = SLC

Speed Grade

Blank

Classification

Mark Die

nCE RnB I/O Channels

Package Code

WP = 48-pin TSOP 1

HC = 63-ball VFBGA (10.5 x 13 x 1.0mm)

H4 = 63-ball VFBGA (9 x 11 x 1.0mm)

Operating Voltage Range

A = 3.3V (2.7–3.6V)

Interface

A = Async only

B = 1.8V (1.7–1.95V)

Feature Set

D = Feature set D

PDF: 09005aef83b25735

m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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