Datasheet > JS28F640P30BF75D

JS28F640P30BF75D

更新时间： 2024-12-02 15:17:39

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
90页	1188K
描述
64Mb, 128Mb, 65nm, Single Bit Per Cell, Parallel NOR Flash

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数据手册

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JS28F640P30BF75D 数据手册

Numonyx^®Axcell™ P30-65nm Flash Memory

128-Mbit, 64-Mbit Single Bit per Cell (SBC)

Datasheet

Product Features

High Performance:

Enhanced Security:

— 65ns initial access time for Easy BGA and

QUAD+

— Absolute write protection: VPP = Vss

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down capability

— Password Access feature

— 75ns initial access time for TSOP

— 25ns 8-word asynchronous-page read mode

— 52MHz with zero WAIT states, 17ns clock-to-

data output synchronous-burst read mode

— One-Time Programmable Register:

— 4-, 8-, 16- and continuous-word options for

burst mode

— 64 OTP bits, programmed with unique

information by Numonyx

— 1.8V Low Power buffered programming at

1.8MByte/s (Typ) using 256-word buffer

— 2112 OTP bits, available for customer

programming

— Buffered Enhanced Factory Programming at

3.2MByte/s (typ) using 256-word buffer

Software:

— 20µs (Typ) program suspend

Architecture:

— 20µs (Typ) erase suspend

— Asymmetrically-blocked architecture

— Basic Command Set and Extended Function

Interface (EFI) Command Set compatible

— Four 32-KByte parameter blocks: top or

bottom configuration

— Common Flash Interface capable

— 128-KByte array blocks

Density and Packaging:

— Blank Check to verify an erased block

— 56-Lead TSOP (128-Mbit, 64-Mbit)

— 64-Ball Easy BGA (128-Mbit, 64-Mbit)

— 88-Ball QUAD+ Package (128-Mbit)

— 16-bit wide data bus

Voltage and Power:

— VCC (core) voltage: 1.7V – 2.0V

— VCCQ (I/O) voltage: 1.7V – 3.6V

— Standby current: 30µA(Typ)/55µA(Max)

Quality and Reliability:

— Continuous synchronous read current: 23mA

(Typ)/28mA (Max) at 52MHz

— JESD47E Compliant

— Operating temperature: –40°C to +85°C

— Minimum 100,000 erase cycles

— 65nm process technology

Datasheet

Apr 2010

Order Number: 208033-02

12 3 4 5 6 7...90

中文翻译

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JS28F640P30T85	NUMONYX	获取价格	Numonyx StrataFlash Embedded Memory
JS28F640P30T85A	NUMONYX	获取价格	Flash, 4MX16, 88ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56
JS28F640P30TF75A	MICRON	获取价格	NumonyxÂ® Axcellâ¢ P30-65nm Flash Memory
JS28F640P33B85	INTEL	获取价格	Flash, 4MX16, 85ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56
JS28F640P33B85A	NUMONYX	获取价格	Flash, 4MX16, 85ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56
JS28F640P33BF70	NUMONYX	获取价格	NumonyxÂ® P33-65nm Flash Memory
JS28F640P33BF70A	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
JS28F640P33T85	NUMONYX	获取价格	Flash, 4MX16, 85ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56
JS28F640P33T85	INTEL	获取价格	Flash, 4MX16, 85ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56