Datasheet > JS28F640P33TF70

JS28F640P33TF70

更新时间： 2024-12-01 12:48:19

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存
页数	文件大小	规格书
88页	3957K
描述
NumonyxÂ® P33-65nm Flash Memory

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中文翻译

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数据手册

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JS28F640P33TF70 数据手册

Numonyx P33-65nm Flash Memory

128-Mbit, 64-Mbit Single Bit per Cell (SBC)

Datasheet

Product Features

High performance:

Security:

— 60ns initial access time for Easy BGA

— 70ns initial access time for TSOP

— 25ns 8-word asynchronous-page read

mode

— 52MHz with zero wait states, 17ns clock-to-

data output synchronous-burst read mode

— 4-, 8-, 16-, and continuous-word options

for burst mode

— One-Time Programmable Registers:

— 64 OTP bits, programmed with unique

information by Numonyx

— 2112 OTP bits, available for customer

programming

— Absolute write protection: V_PP= V_SS

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down capability

— Password Access feature

— 3.0V buffered programming at 1.8MByte/s

(Typ) using 256-word buffer

— Buffered Enhanced Factory Programming at

3.2MByte/s (typ) using 256-word buffer

Software:

— 20µs (Typ) program suspend

— 20µs (Typ) erase suspend

— Basic Command Set and Extended Function

Interface (EFI) Command Set compatible

Architecture:

— Asymmetrically-blocked architecture

— Four 32-KByte parameter blocks: top or

bottom configuration

— 128-KByte main blocks

— Common Flash Interface capable

Density and Packaging:

— Blank Check to verify an erased block

— 56-Lead TSOP package (128-Mbit, 64-Mbit)

— 64-Ball Easy BGA package (128-Mbit, 64-

Mbit)

Voltage and Power:

— V_CC(core) voltage: 2.3V – 3.6V

— V_CCQ(I/O) voltage: 2.3V – 3.6V

— 16-bit wide data bus

— Standby current: 35μA(Typ) for 64-Mbit,

50μA(Typ) for 128-Mbit

Quality and Reliability:

— JESD47E Compliant

— Continuous synchronous read current:

23mA (Typ) at 52 MHz

— Operating temperature: –40°C to +85°C

— Minimum 100,000 erase cycles per block

— 65nm process technology

Datasheet

Jul 2011

Order Number: 208034-04

12 3 4 5 6 7...88

中文翻译

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与JS28F640P33TF70相关器件

型号	品牌	获取价格	描述	数据表
JS28F640P33TF70A	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
JS28F800C3BD70	NUMONYX	获取价格	Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, LEAD FREE, TSOP-48
JS28F800C3BD70	INTEL	获取价格	Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, LEAD FREE, TSOP-48
JS28F800C3BD70	ROCHESTER	获取价格	512KX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, LEAD FREE, TSOP-48
JS28F800C3TD70	INTEL	获取价格	Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, LEAD FREE, TSOP-48
JS28F800C3TD70	NUMONYX	获取价格	Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, LEAD FREE, TSOP-48
JS29F02G08AANB3	NUMONYX	获取价格	Flash, 256MX8, 18ns, PDSO48, LEAD FREE, PLASTIC, TSOP1-48
JS29F04G08AANB1	INTEL	获取价格	Flash, 512KX8, 20ns, PDSO48, LEAD FREE, TSOP-48
JS29F04G08BANB3	NUMONYX	获取价格	Flash, 512MX8, 18ns, PDSO48, LEAD FREE, PLASTIC, TSOP1-48
JS29F08G08CANB1	INTEL	获取价格	Flash, 1MX8, 20ns, PDSO48, LEAD FREE, TSOP-48