JS28F640P30B85

更新时间： 2024-12-01 03:46:15

品牌	Logo	应用领域
恒忆 - NUMONYX		存储
页数	文件大小	规格书
99页	1401K
描述
Numonyx StrataFlash Embedded Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JS28F640P30B85 数据手册

Numonyx™ StrataFlash Embedded Memory

(P30)

Datasheet

Product Features

High performance

Security

— One-Time Programmable Registers:

— 85 ns initial access

• 64 unique factory device identifier bits

• 2112 user-programmable OTP bits

— Selectable OTP Space in Main Array:

• Four pre-defined 128-KByte blocks (top or bottom

configuration)

— 52 MHz with zero wait states, 17ns clock-to-data output

synchronous-burst read mode

— 25 ns asynchronous-page read mode

— 4-, 8-, 16-, and continuous-word burst mode

— Buffered Enhanced Factory Programming (BEFP) at 5 μs/

byte (Typ)

• Up to Full Array OTP Lockout

— Absolute write protection: V = V

— 1.8 V buffered programming at 7 μs/byte (Typ)

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

Architecture

— Multi-Level Cell Technology: Highest Density at Lowest

Cost

Software

— Asymmetrically-blocked architecture

— Four 32-KByte parameter blocks: top or bottom

configuration

— 20 μs (Typ) program suspend

— 20 μs (Typ) erase suspend

— Numonyx™ Flash Data Integrator optimized

— Basic Command Set and Extended Command Set

compatible

— 128-KByte main blocks

Voltage and Power

— V (core) voltage: 1.7 V – 2.0 V

— Common Flash Interface capable

— V

(I/O) voltage: 1.7 V – 3.6 V

CCQ

Density and Packaging

— Standby current: 20μA (Typ) for 64-Mbit

— 4-Word synchronous read current:

13 mA (Typ) at 40 MHz

— 56- Lead TSOP package (64, 128, 256,

512- Mbit)

— 64- Ball Numonyx™ Easy BGA package (64,

128, 256, 512- Mbit)

— Numonyx™ QUAD+ SCSP (64, 128, 256,

512- Mbit)

Quality and Reliability

— Operating temperature: –40 °C to +85 °C

— Minimum 100,000 erase cycles per block

— ETOX™ VIII process technology

— 16-bit wide data bus

Order Number: 306666-11

November 2007

12 3 4 5 6 7...99

中文翻译

下载PDF

与JS28F640P30B85相关器件

型号	品牌	获取价格	描述	数据表
JS28F640P30B85A	NUMONYX	获取价格	暂无描述
JS28F640P30B85B	NUMONYX	获取价格	Flash, 4MX16, 88ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56
JS28F640P30BF75A	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
JS28F640P30BF75D	MICRON	获取价格	64Mb, 128Mb, 65nm, Single Bit Per Cell, Parallel NOR Flash
JS28F640P30T85	INTEL	获取价格	Intel StrataFlash Embedded Memory
JS28F640P30T85	NUMONYX	获取价格	Numonyx StrataFlash Embedded Memory
JS28F640P30T85A	NUMONYX	获取价格	Flash, 4MX16, 88ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56
JS28F640P30TF75A	MICRON	获取价格	NumonyxÂ® Axcellâ¢ P30-65nm Flash Memory
JS28F640P33B85	INTEL	获取价格	Flash, 4MX16, 85ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56
JS28F640P33B85A	NUMONYX	获取价格	Flash, 4MX16, 85ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56