Datasheet > JS28F640J3F75D

JS28F640J3F75D

更新时间： 2024-12-02 14:59:03

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
66页	2203K
描述
32Mb, 64Mb, 128Mb, 65nm Embedded Parallel NOR Flash Memory, Single Bit Per Cell (SBC)

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JS28F640J3F75D 数据手册

Numonyx^®Embedded Flash Memory (J3 65

nm) Single Bit per Cell (SBC)

32, 64, and 128 Mbit

Datasheet

Product Features

Architecture

Security

— Symmetrical 128-KB blocks

— 128 Mbit (128 blocks)

— 64 Mbit (64 blocks)

— Enhanced security options for code

protection

— Absolute protection with V_PEN= Vss

— Individual block locking

— 32 Mbit (32 blocks)

— Block erase/program lockout during power

transitions

— Password Access feature

— One-Time Programmable Register:

64 OTP bits, programmed with unique

information by Numonyx

— Blank Check to verify an erased block

Performance

— Initial Access Speed: 75ns

— 25 ns 8-word Asynchronous page-mode

reads

— 256-Word write buffer for x16 mode, 256-

Byte write buffer for x8 mode;

1.41 µs per Byte Effective programming

time

64 OTP bits, available for customer

programming

Software

— Program and erase suspend support

— Numonyx^®Flash Data Integrator (FDI)

— Common Flash Interface (CFI) Compatible

— Scalable Command Set

System Voltage

— V_CC= 2.7 V to 3.6 V

— V_CCQ= 2.7 V to 3.6 V

Packaging

Quality and Reliability

— 56-Lead TSOP

— 64-Ball Easy BGA package

— Operating temperature:

-40 °C to +85 °C

— 100K Minimum erase cycles per block

— 65 nm Flash Technology

— JESD47E Compliant

208032-03

Jan 2011

Micron Technology, Inc., reserves the right to change products or specifications without notice.

12 3 4 5 6 7...66

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JS28F640J3F75D 替代型号

型号	品牌	替代类型	描述	数据表
JS28F640J3F75B	MICRON	功能相似	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard

与JS28F640J3F75D相关器件

型号	品牌	获取价格	描述	数据表
JS28F640J3F75E	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
JS28F640P30B85	NUMONYX	获取价格	Numonyx StrataFlash Embedded Memory
JS28F640P30B85	INTEL	获取价格	Intel StrataFlash Embedded Memory
JS28F640P30B85A	NUMONYX	获取价格	暂无描述
JS28F640P30B85B	NUMONYX	获取价格	Flash, 4MX16, 88ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56
JS28F640P30BF75A	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
JS28F640P30BF75D	MICRON	获取价格	64Mb, 128Mb, 65nm, Single Bit Per Cell, Parallel NOR Flash
JS28F640P30T85	INTEL	获取价格	Intel StrataFlash Embedded Memory
JS28F640P30T85	NUMONYX	获取价格	Numonyx StrataFlash Embedded Memory
JS28F640P30T85A	NUMONYX	获取价格	Flash, 4MX16, 88ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56