Datasheet > JS28F064M29EWTA

JS28F064M29EWTA

更新时间： 2024-01-18 18:35:33

品牌	Logo	应用领域
镁光 - MICRON		PC
页数	文件大小	规格书
132页	1301K
描述
Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hardening precautions for the handling and assembly of semiconductor die, wafers, packages, and PCBs.

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Micron Confidential and Proprietary

4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory

Revision History

Rev. N – 10/12

• Updated part number chart with option X for product longevity program (PLP) under

Special Options

Rev. M – 02/12

Rev. L – 1/12

• Updated I_SB2spec in 3.3V DC Characteristics and Operating Conditions table

• Updated 63-ball package dimension drawing

• Corrected the P1 values in the Feature Addresses 01h: Timing Mode table

Rev. K – 11/11

• Command Definitions topic, Command Set table: Changed OTP DATA LOCK BY

BLOCK (ONFI) to OTP DATA LOCK BY PAGE (ONFI); fixed unresolved xref to c_inter-

leaved_die_multi-lun_operations.dita in note 2

• One-Time Programmable (OTP) Operations topic, OTP DATA PROTECT (80h-10) sec-

tion: Updated content

Rev. J – 09/11

Rev. I – 07/11

• Deleted OCPL notation from 48-Pin TSOP – Type 1 figure

• Removed former 48-Pin TSOP – Type 1, CPL figure

• Added 16Gb and 16Gb part numbers to document

• Updated part number chart to include 16Gb

• Added 16Gb density to Device and Array Organization

• Clarification to Notes for Electrical Specifications table

Rev. H – 12/10

Rev. G – 10/10

Rev. F – 06/10

• Updated status bit 1 under Program Page in Status Operations

• Removed the words "or by factory (always enabled)" from the General Description

• Replaced blank with 3 for number of valid address cycles on Block Erase Two-Plane in

the Two-Plane Command Set Table

Rev. E – 05/10

• Changed status to Production

• Added part numbers to document

PDF: 09005aef83b25735

m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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