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JS28F064M29EWTA PDF预览

JS28F064M29EWTA

更新时间: 2024-01-18 18:35:33
品牌 Logo 应用领域
镁光 - MICRON PC
页数 文件大小 规格书
132页 1301K
描述
Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hardening precautions for the handling and assembly of semiconductor die, wafers, packages, and PCBs.

JS28F064M29EWTA 数据手册

 浏览型号JS28F064M29EWTA的Datasheet PDF文件第123页浏览型号JS28F064M29EWTA的Datasheet PDF文件第124页浏览型号JS28F064M29EWTA的Datasheet PDF文件第125页浏览型号JS28F064M29EWTA的Datasheet PDF文件第127页浏览型号JS28F064M29EWTA的Datasheet PDF文件第128页浏览型号JS28F064M29EWTA的Datasheet PDF文件第129页 
Micron Confidential and Proprietary  
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory  
Asynchronous Interface Timing Diagrams  
Figure 91: READ ID Operation  
CLE  
CE#  
WE#  
tAR  
ALE  
RE#  
tWHR  
tREA  
Byte 0  
I/Ox  
90h  
00h or 20h  
Byte 1  
Byte 2  
Byte 3  
Byte 4  
Address, 1 cycle  
Figure 92: PROGRAM PAGE Operation  
CLE  
CE#  
tWC  
tADL  
WE#  
tWB  
tWHR  
tPROG or  
tPROG_ECC  
ALE  
RE#  
DIN  
DIN  
M
Col  
Col  
Row  
Row  
add 2  
Row  
I/Ox  
RDY  
80h  
10h  
70h  
Status  
add 1  
add 2  
add 1  
add 3  
N
1 up to m byte  
serial Input  
Don’t Care  
PDF: 09005aef83b25735  
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
126  
© 2009 Micron Technology, Inc. All rights reserved.  

JS28F064M29EWTA 替代型号

型号 品牌 替代类型 描述 数据表
M29W640GT70NB6E MICRON

类似代替

64Mb (8Mb x8 or 4Mb x16), Uniform Block or Boot Block, Parallel NOR Flash Memory

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