Datasheet > JS28F064M29EWTA

JS28F064M29EWTA

更新时间： 2024-01-18 18:35:33

品牌	Logo	应用领域
镁光 - MICRON		PC
页数	文件大小	规格书
132页	1301K
描述
Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hardening precautions for the handling and assembly of semiconductor die, wafers, packages, and PCBs.

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替代型号

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JS28F064M29EWTA 数据手册

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浏览型号JS28F064M29EWTA的Datasheet PDF文件第130页

浏览型号JS28F064M29EWTA的Datasheet PDF文件第131页

Micron Confidential and Proprietary

4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory

Asynchronous Interface Timing Diagrams

Figure 95: PROGRAM PAGE CACHE

CLE

CE#

^tADL

^tWC

WE#

^tWB^tCBSY

^tWB ^tLPROG

^tWHR

ALE

RE#

Col

Row Row Row

add 1 add 2 add 1 add 2 add 3

Din

Col

Col Row Row

Row

add 1 add 2 add 1 add 2 add 3

Din

I/Ox

RDY

80h

15h

80h

10h

70h

Status

Serial input

Last page - 1

Last page

Don’t Care

Figure 96: PROGRAM PAGE CACHE Ending on 15h

CLE

CE#

ADL

WE#

WHR

ALE

RE#

Col

Col Row Row Row

Din

Col

Col Row Row Row Din

Din

I/Ox 80h

15h 70h Status

80h

15h

70h

Status

70h

Status

add 1 add 2 add 1 add 2 add 3

Serial input

Last page – 1

Last page

To verify successful completion of the last 2 pages:

I/O5 = 1, Ready

I/O0 = 0, Last page PROGRAM successful

I/O1 = 0, Last page – 1 PROGRAM successful

Poll status until:

I/O6 1, Ready

Don’t Care

PDF: 09005aef83b25735

m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

128

1...125 126 127128129 130 131 132

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JS28F064M29EWTA 替代型号

型号	品牌	替代类型	描述	数据表
M29W640GT70NB6E	MICRON	类似代替	64Mb (8Mb x8 or 4Mb x16), Uniform Block or Boot Block, Parallel NOR Flash Memory

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