Datasheet > JS28F064M29EWTA

JS28F064M29EWTA

更新时间： 2024-01-18 18:35:33

品牌	Logo	应用领域
镁光 - MICRON		PC
页数	文件大小	规格书
132页	1301K
描述
Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hardening precautions for the handling and assembly of semiconductor die, wafers, packages, and PCBs.

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JS28F064M29EWTA 数据手册

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Micron Confidential and Proprietary

4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory

Asynchronous Interface Timing Diagrams

Figure 99: INTERNAL DATA MOVE (85h-10h) with Random Data Input with Internal ECC Enabled

R_ECC

PROG_ECC

R/B#

Address

I/O[7:0]

00h

35h

70h

Status

00h

85h

Data 85h

Data 10h

70h

OUT

(5 cycles)

(2 cycles)

Source address

D_OUTis optional Destination address

SR bit 0 = 0 READ successful

SR bit 1 = 0 READ error

Column address 1, 2

(Unlimitted repetitions are possible)

Figure 100: ERASE BLOCK Operation

CLE

CE#

^tWC

WE#

^tWB

^tWHR

ALE

RE#

^tBERS

Busy

Row

Status

I/O[7:0]

RDY

60h

D0h

70h

add 1

add 2

add 3

Row address

READ STATUS

command

I/O0

0, Pass

1, Fail

Don’t Care

PDF: 09005aef83b25735

m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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