Datasheet > JMTQ380C03D

JMTQ380C03D

更新时间： 2024-11-19 14:53:03

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
10页	518K
描述
低压 N-ch (≤ 30V )

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中文翻译

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数据手册

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JMTQ380C03D 数据手册

JMTQ380C03D

Description

JMT N And P-Channel Enhancement Mode MOSFET

Features

Application

 N-Channel: 30V, 6A

 Battery Protection

 Load Switch

R_DS(ON)< 36mΩ @ V_GS= 10V

R_DS(ON)< 56mΩ @ V_GS= 4.5V

 P-Channel: -30V, -5A

 Power Management

R_DS(ON)< 50mΩ @ V_GS= -10V

R_DS(ON)< 78mΩ @ V_GS= -4.5V

 Excellent Gate Charge x R_DS(ON)Product(FOM)

 Very Low On-resistance R_DS(ON)

 Fast Switching Speed

100% UIS TESTED!

100% ΔVds TESTED!

PDFN3x3-8L-D

Marking and pin Assignment

Schematic Diagram

Package Marking and Ordering Information

Reel

(PCS)

Per Carton

(PCS)

Device Marking

Device

OUTLINE

Device Package

Reel Size

Q380C03D

JMTQ380C03D

TAPING

PDFN3x3-8L-D

13inch

5000

50000

Absolute Maximum Ratings (T_C=25℃ unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Max. N-Channel

Max. P-Channel

Units

V_DSS

V_GSS

±20

-30

±20

-5

Gate-Source Voltage

T_C= 25℃

I_D

Continuous Drain Current

T _C= 100℃

3.9

-3.3

-20

I_DM

E_AS

Pulsed Drain Current ^note1

Single Pulsed Avalanche Energy ^note2

Power Dissipation

5.1

2.2

P_D

T_C= 25℃

2.1

R_θJC

T_J, T_STG

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

℃/W

℃

-55 to +150

JieJie Microelectronics CO. , Ltd

Version :1.1

- 1 -

12 3 4 5 6 7...10

中文翻译

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