Datasheet > JMTV250P02A

JMTV250P02A

更新时间： 2024-11-19 14:53:51

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	398K
描述
低压 P-ch (-30V ~ -5V)

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中文翻译

获取价格

数据手册

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JMTV250P02A 数据手册

JMTV250P02A

Description

JMT P-channel Enhancement Mode Power MOSFET

Features

Application

 -20V, -10A

 Load Switch

R_DS(ON)<19.2mΩ @ V_GS=-4.5V

 PWM Application

R_DS(ON)<27.8mΩ @ V_GS=-2.5V

 Advanced Trench Technology

 Excellent R_DS(ON)and Low Gate Charge

 Lead Free

 Power Management

100% UIS TESTED!

DFN2020-6L top view

Marking and pin Assignment

Schematic Diagram

Package Marking and Ordering Information

Reel

(pcs)

Per Carton

(pcs)

Device Marking

Device

Outline

Package

Reel Size

250P02A

JMTV250P02A

TAPING

DFN2020-6L

7”

3000

120000

Absolute Maximum Ratings (T_A=25℃ unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Max.

Units

V_DSS

V_GSS

-20

±12

Gate-Source Voltage

T_C= 25℃

T_C= 100℃

-10

I_D

Continuous Drain Current

Pulsed Drain Current ^note1

-6.5

I_DM

E_AS

-40

Single Pulsed Avalanche Energy ^note2

P_D

Power Dissipation

T_C= 25℃

R_θJC

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

9.3

℃/W

℃

T_J, T_STG

-55 to +150

JieJie Microelectronics Co.,Ltd.

Version : 1.0

- 1 -

12 3 4 5 6

中文翻译

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