JMTV250P02A
Description
JMT P-channel Enhancement Mode Power MOSFET
Features
Application
-20V, -10A
Load Switch
RDS(ON)<19.2mΩ @ VGS =-4.5V
PWM Application
RDS(ON)<27.8mΩ @ VGS =-2.5V
Advanced Trench Technology
Excellent RDS(ON) and Low Gate Charge
Lead Free
Power Management
100% UIS TESTED!
DFN2020-6L top view
Marking and pin Assignment
Schematic Diagram
Package Marking and Ordering Information
Reel
(pcs)
Per Carton
(pcs)
Device Marking
Device
Outline
Package
Reel Size
250P02A
JMTV250P02A
TAPING
DFN2020-6L
7”
3000
120000
Absolute Maximum Ratings (TA=25℃ unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Max.
Units
VDSS
VGSS
-20
±12
V
V
Gate-Source Voltage
TC = 25℃
TC= 100℃
-10
A
ID
Continuous Drain Current
Pulsed Drain Current note1
-6.5
A
IDM
EAS
-40
A
Single Pulsed Avalanche Energy note2
25
mJ
W
PD
Power Dissipation
TC = 25℃
13
RθJC
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
9.3
℃/W
℃
TJ, TSTG
-55 to +150
JieJie Microelectronics Co.,Ltd.
Version : 1.0
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