JMTV200P03A
Description
JMT P-channel Enhancement Mode Power MosFET
Features
Applications
Load Switch
-30V, -11A
PWM Application
Power Management
RDS(ON) < 17.7mΩ @ VGS = -10V
RDS(ON) < 23.3mΩ @ VGS = -4.5V
Advanced Trench Technology
Excellent RDS(ON) and Low Gate Charge
Lead Free
100% UIS TESTED!
100% ΔVds TESTED!
D
S
G
Schematic Diagram
Marking and Pin Assignment
DFN2020-6L
Package Marking and Ordering Information
Per Carton
Device Marking
Device
Package
Outline
Reel Size Reel(pcs)
7" 3000
(pcs)
200P03A
JMTV200P03A
DFN2020-6L
TAPING
120000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
Units
VDS
VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
-30
±20
-11
-6.3
-44
7.8
2.6
49
V
V
TA = 25°C
ID
Continuous Drain Current
A
TA = 100°C
Pulsed Drain Current (1)
Single Pulsed Avalanche Energy (2)
IDM
EAS
A
mJ
PD
Power Dissipation
TA = 25°C
W
Thermal Resistance, Junction to Ambient(3)
RθJA
°C/W
°C
TJ, TSTG
Junction & Storage Temperature Range
-55 to 150
JieJie Microelectronics Co., Ltd
1
Version:1.1