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JMTV200P03A PDF预览

JMTV200P03A

更新时间: 2024-11-19 14:52:35
品牌 Logo 应用领域
捷捷微 - JJM /
页数 文件大小 规格书
6页 1260K
描述
低压 P-ch (-30V ~ -5V)

JMTV200P03A 数据手册

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JMTV200P03A  
Description  
JMT P-channel Enhancement Mode Power MosFET  
Features  
Applications  
Load Switch  
-30V, -11A  
PWM Application  
Power Management  
RDS(ON) < 17.7mΩ @ VGS = -10V  
RDS(ON) < 23.3mΩ @ VGS = -4.5V  
Advanced Trench Technology  
Excellent RDS(ON) and Low Gate Charge  
Lead Free  
100% UIS TESTED!  
100% ΔVds TESTED!  
D
S
G
Schematic Diagram  
Marking and Pin Assignment  
DFN2020-6L  
Package Marking and Ordering Information  
Per Carton  
Device Marking  
Device  
Package  
Outline  
Reel Size Reel(pcs)  
7" 3000  
(pcs)  
200P03A  
JMTV200P03A  
DFN2020-6L  
TAPING  
120000  
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Value  
Symbol  
Units  
VDS  
VGS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
-30  
±20  
-11  
-6.3  
-44  
7.8  
2.6  
49  
V
V
TA = 25°C  
ID  
Continuous Drain Current  
A
TA = 100°C  
Pulsed Drain Current (1)  
Single Pulsed Avalanche Energy (2)  
IDM  
EAS  
A
mJ  
PD  
Power Dissipation  
TA = 25°C  
W
Thermal Resistance, Junction to Ambient(3)  
RθJA  
°C/W  
°C  
TJ, TSTG  
Junction & Storage Temperature Range  
-55 to 150  
JieJie Microelectronics Co., Ltd  
1
Version1.1  

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