Datasheet > JMTQ55P02A

JMTQ55P02A

更新时间： 2024-11-19 14:54:51

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	452K
描述
低压 P-ch (-30V ~ -5V)

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中文翻译

获取价格

数据手册

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JMTQ55P02A 数据手册

JMTQ55P02A

Description

JMT P-channel Enhancement Mode Power MOSFET

Features

Application

 V_DS=-20V, I_D=-55A

 PWM Applications

 Load Switch

R_DS(ON)<8.3mΩ @ VGS = -4.5V

R_DS(ON)<10.4mΩ @ VGS = -2.5V

 High Power and Current Handing Capability

 Lead Free Product is Acquired

 Surface Mount Package

100% UIS TESTED!

100% ΔVds TESTED!

PDFN3x3-8L

Marking and pin Assignment

Schematic Diagram

Package Marking and Ordering Information

Reel

(PCS)

Per Carton

(PCS)

Device Marking

Device

OUTLINE

Device Package

Reel Size

JMTQ55P02A

TAPING

PDFN3x3-8L

13inch

5000

50000

Absolute Maximum Ratings (T_C=25℃ unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Max.

Units

V_DSS

V_GSS

-20

±12

Gate-Source Voltage

T_C= 25℃

-55

I_D

Continuous Drain Current

Pulsed Drain Current ^note1

T_C= 100℃

-35

I_DM

E_AS

-220

Single Pulsed Avalanche Energy ^note2

P_D

Power Dissipation

T_C= 25℃

R_θJC

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

1.9

℃/ W

℃

T_J, T_STG

-55 to +150

JieJie Microelectronics CO. , Ltd

Version :1.3

- 1 -

12 3 4 5 6

中文翻译

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