JMTV100N02A
Description
JMT N-channel Enhancement Mode Power MOSFET
Features
Applications
Load Switch
20V, 10A
PWM Application
RDS(ON) < 9.8mΩ @ VGS = 4.5V
Power Management
RDS(ON) < 12.5mΩ @ VGS = 2.5V
Advanced Trench Technology
Excellent RDS(ON) and Low Gate Charge
Lead Free
100% UIS TESTED!
100% ΔVds TESTED!
D
S
G
30
Schematic Diagram
DFN2020-6L
Marking and Pin
Package Marking and Ordering Information
Per Carton
Device Marking
Device
Package
Outline
Reel Size
Reel(pcs)
(pcs)
100N02A
JMTV100N02A
DFN2020-6L
TAPING
7"
3000
120000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
Units
VDS
VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
20
±12
10
6
V
V
TA = 25°C
ID
Continuous Drain Current
A
TA = 100°C
Pulsed Drain Current (1)
Single Pulsed Avalanche Energy (2)
IDM
EAS
40
30
2.7
46
A
mJ
W
PD
Power Dissipation
TA = 25°C
Thermal Resistance, Junction to Ambient(3)
Junction & Storage Temperature Range
RθJA
°C/W
°C
TJ, TSTG
-55 to 150
JieJie Microelectronics Co., Ltd
1
Version:1.2