Datasheet > JMTV210P02A

JMTV210P02A

更新时间： 2024-11-19 14:55:31

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	1258K
描述
低压 P-ch (-30V ~ -5V)

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中文翻译

获取价格

数据手册

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JMTV210P02A 数据手册

JMTV210P02A

Description

JMT P-channel Enhancement Mode Power MosFET

Features

Applications

 Load Switch

 -20V, -15A

 PWM Application

 Power Management

R_DS(ON)< 15.1mΩ @ V_GS= -4.5V

R_DS(ON)< 20.7mΩ @ V_GS= -2.5V

 Advanced Trench Technology

 Excellent R_DS(ON)and Low Gate Charge

 Lead Free

100% UIS TESTED!

100% ΔVds TESTED!

Marking and Pin

DFN2020-6L

Schematic Diagram

Package Marking and Ordering Information

Per Carton

Device Marking

Device

Package

DFN2020-6L

Outline

Reel Size Reel(pcs)

7" 3000

(pcs)

210P02A

JMTV210P02A

TAPING

120000

Absolute Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Value

Symbol

Units

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

-20

±12

-15

-9.5

-60

T_A= 25°C

I_D

Continuous Drain Current

T_A= 100°C

Pulsed Drain Current ⁽¹⁾

Single Pulsed Avalanche Energy ⁽²⁾

I_DM

E_AS

P_D

Power Dissipation

T_A= 25°C

2.6

Thermal Resistance, Junction to Ambient⁽³⁾

R_θJA

°C/W

°C

T_J, T_STG

Junction & Storage Temperature Range

-55 to 150

JieJie Microelectronics Co., Ltd

Version：1.5

12 3 4 5 6

中文翻译

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