JMTP075N06A
Figure 8: Normalized on Resistance vs.
Junction Temperature
Figure 7: Normalized Breakdown Voltage vs.
Junction Temperature
VBR(DSS)
RDS(on)
2.5
1.3
1.2
1.1
1.0
2.0
1.5
1.0
0.5
0.9
0.8
Tj (℃)
Tj (℃)
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 9: Maximum Safe Operating Area
Figure 10: Maximum Continuous Drain Current
vs. Ambient Temperature
ID(A)
ID(A)
103
20
Limited by RDS(on)
16
102
101
100
10-1
10μs
12
8
100μs
1ms
10ms
4
0
TA=25℃
Single pulse
100ms
DC
TA (℃)
VDS (V)
0.1
1
10
100
0
25
50
75
100
125
150
Figure.11: Maximum Effective
Transient Thermal Impedance, Junction-to-Ambient
ZthJ-A(℃/W)
102
101
100
D=0.5
D=0.2
t1
D=0.1
t2
D=0.05
D=0.02
D=0.01
10-1
10-2
Notes:
Single pulse 1.Duty factor D=t1/t2
2.Peak TJ=PDM*ZthJA+TA
TP(s)
10-6
10-5
10-4
10-3
10-2
10-1
100
101
JieJie Microelectronics CO. , Ltd
Version :1.0
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