JMTP330N06D
Description
JMT Dual N-channel Enhancement Mode Power MOSFET
Features
Application
60V, 5A
Load Switch
RDS(ON) < 38mΩ @ VGS = 10V
PWM Application
Power Management
RDS(ON) < 47mΩ @ VGS = 4.5V
Advanced Trench Technology
Excellent RDS(ON) and Low Gate Charge
Lead Free
100% UIS TESTED!
SOP-8(Dual)
Marking and pin Assignment
Schematic Diagram
Package Marking and Ordering Information
Reel
(pcs)
Per Carton
(pcs)
Device Marking
Device
Outline
Package
Reel Size
330N06D
JMTP330N06D
TAPING
SOP-8
13”
4000
48000
Absolute Maximum Ratings (TA=25℃ unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Max.
Units
VDSS
VGSS
60
V
V
Gate-Source Voltage
±20
TA = 25℃
5
A
ID
Continuous Drain Current
Pulsed Drain Current note1
TA = 100℃
3.3
A
IDM
EAS
PD
20
20
A
Single Pulsed Avalanche Energy note2
mJ
W
Power Dissipation
TA = 25℃
1.74
RθJA
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
72
℃/W
℃
TJ, TSTG
-55 to +150
JieJie Microelectronics Co., Ltd.
Version :1.3
- 1 -