MIL-PRF-19500/660E
4.3.1 Gate stress test. Apply VGS = -30 V minimum for t = 250 µs minimum.
4.3.2 Single pulse avalanche energy (EAS).
a. Peak current ..................................................IAS = ID1 .
b. Inductance .....................................................L = (2*EAS/(ID1)2)*((VBR-VDD)/VBR) mH minimum.
c. Gate to source resistor...................................RGS: 25 ≤ RGS ≤ 200 Ω.
d. Supply voltage ...............................................VDD = -25 V dc, except VDD = -50 V dc for 2N7426.
e. Initial case temperature..................................TC = +25°C, -5°C, +10°C.
f. Gate voltage ..................................................VGS = -12 V dc.
g. Number of pulses to be applied .....................1 pulse minimum.
4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method
3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where appropriate).
Measurement delay time (tMD) = 70 µs max. See table III, group E, subgroup 4 herein.
* 4.3.4 Dielectric withstanding voltage.
a. Magnitude of test voltage……………………………..900 V dc.
b. Duration of application of test voltage………………..15 seconds (min).
c. Points of application of test voltage…………………...All leads to case (bunch connection).
d. Method of connection…………………………………..Mechanical.
e. Kilovolt-ampere rating of high voltage source……….1,200 V/1.0 mA (min).
f. Maximum leakage current……………………………...1.0 mA.
g. Voltage ramp up time...................................................500 V/second.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500
and table I herein.
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