Datasheet > JANTXVR2N7426

JANTXVR2N7426

更新时间： 2023-06-19 14:26:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
22页	232K
描述
Rad hard, -200V, -27A, single, P-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 krad(Si) TID, QPL

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JANTXVR2N7426 数据手册

MIL-PRF-19500/660E

* 4.3 Screening (JANS and JANTXV). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as

specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed

the limits of table I herein shall not be acceptable.

Screen (see table E-IV

of MIL-PRF-19500)

(1) (2)

Measurement

JANS

JANTXV

(3)

Gate stress test (see 4.3.1)

Method 3470 of MIL-STD-750, E_AStest

(see 4.3.2)

Method 3470 of MIL-STD-750, E_AStest

(see 4.3.2)

(3) 3c

Method 3161 of MIL-STD-750, thermal

impedance (see 4.3.3)

Method 3161 of MIL-STD-750, thermal

impedance (see 4.3.3)

Subgroup 2 of table I herein

Not applicable

I_DSS1, I_GSSF1, and I_GSSR1as a minimum

Method 1042 of MIL-STD-750, test

condition B

Method 1042 of MIL-STD-750, test

condition B

I_GSSF1, I_GSSR1, I_DSS1, r_DS(ON)1, V_GS(TH)1

Subgroup 2 of table I herein.

I_GSSF1, I_GSSR1, I_DSS1, r_DS(ON)1, V_GS(TH)1

Subgroup 2 of table I herein.

∆I_GSSF1= ±20 nA dc or ±100 percent of

initial value, whichever is greater.

∆I_GSSR1= ±20 nA dc or ±100 percent of

initial value, whichever is greater.

∆I_DSS1= ±10 µA dc or ±100 percent of

initial value, whichever is greater.

Method 1042 of MIL-STD-750, test

condition A

Method 1042 of MIL-STD-750, test

condition A

Subgroups 2 and 3 of table I herein

∆I_GSSF1= ±20 nA dc or ±100 percent of

initial value, whichever is greater.

∆I_GSSR1= ±20 nA dc or ±100 percent of

initial value, whichever is greater.

∆I_DSS1= ±10 µA dc or ±100 percent of

initial value, whichever is greater.

∆r_DS(ON)1= ±20 percent of initial value.

Subgroup 2 of table I herein

∆I_GSSF1= ±20 nA dc or ±100 percent of

initial value, whichever is greater.

∆I_GSSR1= ±20 nA dc or ±100 percent of

initial value, whichever is greater.

∆I_DSS1= ±10 µA dc or ±100 percent of

initial value, whichever is greater.

∆r_DS(ON)1= ±20 percent of initial value.

∆V_GS(TH)1= ±20 percent of initial value.

For TO-254AA packages: Method 1081

of MIL-STD-750 (see 4.3.4), Endpoints:

Subgroup 2 of table I herein.

For TO-254AA packages: Method 1081

of MIL-STD-750 (see 4.3.4), Endpoints:

Subgroup 2 of table I herein.

(1) At the end of the test program, I_GSSF1, I_GSSR1, and I_DSS1are measured.

(2) An out-of-family program to characterize I_GSSF1, I_GSSR1, I_DSS1, and V_GS(th)1shall be invoked.

(3) Shall be performed anytime after temperature cycling, screen 3a; JANTXV level does not need to be repeated

in screening requirements.

1...3 4 567 8 9...22

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与JANTXVR2N7426相关器件

型号	品牌	描述	获取价格	数据表
JANTXVR2N7426U	INFINEON	Rad hard, -200V, -29A, single, P-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(S	获取价格
JANTXVR2N7431U	INFINEON	Rad hard, 60V, 56A, single, N-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si)	获取价格
JANTXVR2N7464T2	INFINEON	Rad hard, 500V, 2.6A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 k	获取价格
JANTXVR2N7472U2	INFINEON	Rad hard, 130V, 62A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)	获取价格
JANTXVR2N7473U2	INFINEON	Rad hard, 200V, 53A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100	获取价格
JANTXVR2N7474U2	INFINEON	Rad hard, 250V, 31A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)	获取价格

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