Datasheet > JANTXV2N1485

JANTXV2N1485

更新时间： 2024-11-06 23:01:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
4页	61K
描述
NPN SILICON MEDIUM POWER TRANSISTOR

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中文翻译

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数据手册

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JANTXV2N1485 数据手册

TECHNICAL DATA

NPN SILICON MEDIUM POWER TRANSISTOR

Qualified per MIL-PRF-19500/ 207

Devices

Qualified Level

JAN

JANTX

2N1483

2N1484

2N1485

2N1486

MAXIMUM RATINGS

Ratings

Symbol 2N1483 2N1484 Unit

2N1485 2N1486

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Vdc

Adc

V_CEO

V_CBO

V_EBO

I_C

100

Collector Current -- Continuous

Total Power Dissipation

3.0

@ T_A= 25⁰C ⁽¹⁾

@ T_C= 25⁰C ⁽²⁾

1.75

⁰C

P_T

TO-8*

Operating & Storage Junction Temperature Range

-65 to +200

T_J_,T

stg

1) Derate linearly 0.010 W/⁰C for T_A> 25⁰C

2) Derate linearly 0.143 W/⁰C for T_C> 25⁰C

*See Appendix A for

Package Outline

ELECTRICAL CHARACTERISTICS

Characteristics

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Symbol

V_(BR)CEO

V_(BR)CBO

V_(BR)CEX

Min.

Max.

Unit

Vdc

I_C= 100 mAdc

2N1483, 2N1485

2N1484, 2N1486

Collector-Base Breakdown Voltage

I_C= 100 mAdc

100

2N1483, 2N1485

2N1484, 2N1486

Collector-Emitter Breakdown Voltage

V_EB= 1.5 Vdc, I_C= 0.25 mAdc

100

2N1483, 2N1485

2N1484, 2N1486

Collector-Base Cutoff Current

V_CB= 30 Vdc

V_CB= 50 Vdc

Emitter-Base Cutoff Current

V_EB= 12 Vdc

mAdc

2N1483, 2N1485

2N1484, 2N1486

I_CBO

I_EBO

6 Lake Street, Lawrence, MA 01841

120101

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

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