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JANTXV2N1893S PDF预览

JANTXV2N1893S

更新时间: 2024-01-12 05:58:21
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体小信号双极晶体管
页数 文件大小 规格书
2页 55K
描述
NPN LOW POWER SILICON TRANSISTOR

JANTXV2N1893S 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:TO-39包装说明:CYLINDRICAL, O-MBCY-W3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.08Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-39JESD-30 代码:O-MBCY-W3
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.8 W认证状态:Qualified
参考标准:MIL-19500/182子类别:Other Transistors
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

JANTXV2N1893S 数据手册

 浏览型号JANTXV2N1893S的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN LOW POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 182  
Devices  
Qualified Level  
JAN  
JANTX  
JANTXV  
2N1893  
2N1893S  
2N720A  
MAXIMUM RATINGS  
Ratings  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
VCER  
IC  
All Devices  
Units  
Vdc  
80  
Collector-Base Voltage  
120  
Vdc  
7.0  
Vdc  
Emitter-Base Voltage  
TO-18 (TO-206AA)*  
2N720A  
100  
500  
Vdc  
Collector-Emitter Voltage (RBE = 10 W)  
Collector Current  
mAdc  
2N720A 2N1893, S  
Total Power Dissipation  
@ TA = +250C (1)  
@ TC = +250C (2)  
0.5  
1.8  
0.8  
3.0  
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
srg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol 2N720A 2N1893, S Unit  
97 58  
0C/W  
TO-5*  
2N1893, 2N1893S  
Thermal Resistance, Junction-to-Case  
R
qJC  
1) Derate linearly 2.86 mW/0C for 2N720A, 4.57 mW/0C for 2N1893, S TA > 250C  
2) Derate linearly 10.3 mW/0C for 2N720A, 17.2 mW/0C for 2N1893, S TC > 250C  
*See appendix A for package  
outline  
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 30 mAdc  
Collector-Emitter Breakdown Voltage  
IC = 10 mAdc, RBE = 10 W  
Collector-Base Cutoff Current  
VCB = 120 Vdc  
Vdc  
Vdc  
V(BR)  
CEO  
80  
V(BR)  
CER  
100  
mAdc  
hAdc  
ICBO  
10  
10  
VCB = 90 Vdc  
Emitter-Base Cutoff Current  
VEB = 7.0 Vdc  
VEB = 5.0 Vdc  
mAdc  
hAdc  
IEBO  
10  
10  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

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