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JANTXV2N2150 PDF预览

JANTXV2N2150

更新时间: 2024-11-09 20:49:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体管
页数 文件大小 规格书
1页 65K
描述
Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 Pin, TO-111, 3 PIN

JANTXV2N2150 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-111
包装说明:POST/STUD MOUNT, O-MUPM-X3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.8
最大集电极电流 (IC):2 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-111JESD-30 代码:O-MUPM-X3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified参考标准:MIL
表面贴装:NO端子面层:TIN LEAD
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

JANTXV2N2150 数据手册

  

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