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JANTXV2N2060 PDF预览

JANTXV2N2060

更新时间: 2024-11-26 23:15:55
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
2页 56K
描述
UNITIZED DUAL NPN SILICON TRANSISTOR

JANTXV2N2060 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-78
包装说明:CYLINDRICAL, O-MBCY-W6针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.22
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:60 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):50
JEDEC-95代码:TO-78JESD-30 代码:O-MBCY-W6
JESD-609代码:e0元件数量:2
端子数量:6最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.5 W
认证状态:Qualified参考标准:MIL-19500/270
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):60 MHz
Base Number Matches:1

JANTXV2N2060 数据手册

 浏览型号JANTXV2N2060的Datasheet PDF文件第2页 
TECHNICAL DATA  
UNITIZED DUAL NPN SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 270  
Devices  
Qualified Level  
JAN  
JANTX  
JANTXV  
2N2060  
2N2060L  
MAXIMUM RATINGS  
Ratings  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
2N2060  
60  
Unit  
Vdc  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
100  
Vdc  
7.0  
Vdc  
500  
mAdc  
One  
Both  
Section Sections  
Total Power Dissipation  
@ TA = +250C (1)  
@ TC = +250C (2)  
540  
1.5  
600  
2.12  
mW  
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
1) Derate linearly 3.08 mW/0C for TA > 250C for one section, 3.48 mW/0C for both sections  
TO-78*  
2) Derate linearly 8.6 mW/0C for TC > 250C for one section, 12.1 mW/0C for both sections  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage(3)  
RBE £ 10 W, IC = 10 mAdc  
Collector-Emitter Breakdown Voltage  
IC = 30 mAdc  
80  
60  
Vdc  
Vdc  
V(BR)  
CER  
V(BR)  
CEO  
Collector-Base Cutoff Current  
VCB = 100 Vdc  
VCB = 80 Vdc  
10  
2.0  
mAdc  
hAdc  
ICBO  
Emitter-Base Cutoff Current  
VEB = 7.0 Vdc  
VEB = 5.0 Vdc  
mAdc  
hAdc  
10  
2.0  
IEBO  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

JANTXV2N2060 替代型号

型号 品牌 替代类型 描述 数据表
JANTX2N2060 MICROSEMI

完全替代

UNITIZED DUAL NPN SILICON TRANSISTOR
JAN2N2060 MICROSEMI

完全替代

UNITIZED DUAL NPN SILICON TRANSISTOR
JANTX2N2060L MICROSEMI

类似代替

UNITIZED DUAL NPN SILICON TRANSISTOR

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