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JANTXV2N1613 PDF预览

JANTXV2N1613

更新时间: 2024-11-09 19:21:11
品牌 Logo 应用领域
雷神 - RAYTHEON 晶体管
页数 文件大小 规格书
2页 108K
描述
Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39,

JANTXV2N1613 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.78Is Samacsys:N
配置:SINGLEJEDEC-95代码:TO-39
JESD-30 代码:O-MBCY-W3元件数量:1
端子数量:3封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN认证状态:Not Qualified
参考标准:MIL表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

JANTXV2N1613 数据手册

 浏览型号JANTXV2N1613的Datasheet PDF文件第2页 

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JANTXV2N1714S MICROSEMI

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JANTXV2N1715S ETC

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TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 750MA I(C) | TO-5
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JANTXV2N1716S MICROSEMI

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JANTXV2N1717 MICROSEMI

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Power Bipolar Transistor, 0.75A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin
JANTXV2N1717S MICROSEMI

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Power Bipolar Transistor, 0.75A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin
JANTXV2N1893 MICROSEMI

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NPN LOW POWER SILICON TRANSISTOR