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JANTXV1N6642U PDF预览

JANTXV1N6642U

更新时间: 2024-09-09 20:14:23
品牌 Logo 应用领域
SENSITRON 二极管
页数 文件大小 规格书
5页 321K
描述
Rectifier Diode, 1 Element, 0.3A, 75V V(RRM), Silicon, SURFACEMOUNT PACKAGE-2

JANTXV1N6642U 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:SURFACEMOUNT PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.65Is Samacsys:N
其他特性:METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JESD-30 代码:O-XELF-R2最大非重复峰值正向电流:2.5 A
元件数量:1端子数量:2
最高工作温度:200 °C最大输出电流:0.3 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Qualified参考标准:MIL-19500/578E
最大重复峰值反向电压:75 V最大反向恢复时间:0.005 µs
子类别:Rectifier Diodes表面贴装:YES
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

JANTXV1N6642U 数据手册

 浏览型号JANTXV1N6642U的Datasheet PDF文件第2页浏览型号JANTXV1N6642U的Datasheet PDF文件第3页浏览型号JANTXV1N6642U的Datasheet PDF文件第4页浏览型号JANTXV1N6642U的Datasheet PDF文件第5页 
1N6638/US thru 1N6642/US  
SENSITRON  
___  
SWITCHING / SIGNAL  
DIODES  
SEMICONDUCTOR  
______________________________________________________________________________________  
TECHNICAL DATA  
DATA SHEET 4081, REV D.2  
AV AI L AB L E AS  
1N, JAN, JANTX, JANTXV  
JANS  
JAN EQUIVALENT*  
SJ*, SX*, SV*, SS*  
Switching / Signal Diodes  
Qualified per MIL-PRF-19500/578, /609  
DESCRIPTION:  
This metallurgically bonded switching/signal diode series is military qualified per MIL-PRF-  
19500/578, /609 and is targeted for space, commercial and military aircraft, military vehicles,  
shipboard markets and all high reliability applications.  
FEATURES / BENEFITS:  
MAXIMUM RATINGS  
Ultra fast recovery time  
Metallurgically bonded  
Small size, high density  
Very low capacitance  
Hot solder dipped  
Operating and Storage Temperature: -65oC to +175oC  
Thermal Resistance (junction to lead):  
1N6638,42: 150 oC  
1N6639,40,41: 160 oC  
Thermal Resistance (junction to endcap):  
1N6638,42: 40 oC (U, US)  
JANS available per MIL-PRF-19500/578,  
/609  
1N6639,40,41: 50 oC (US only)  
ELECTRICAL CHARACTERISTICS  
TYPE  
NUMBER  
WORKING  
PEAK  
REVERSE  
VOLTAGE  
PEAK  
FORWARD  
SURGE  
AVERAGE  
RECTIFIED  
FORWARD  
CURRENT  
BREAKDOWN  
VOLTAGE  
REVERSE  
RECOVERY CAPACITANCE  
TIME  
IRM = IF =  
VR=0  
10 mA  
JUNCTION  
CURRENT1  
IFSM  
Amps (pk)  
mA  
Volts (pk)  
V(pk)  
ns  
pF  
55C  
75C  
1N6638/U/US  
1N6639/US  
1N6640/US  
1N6641/US  
1N6642/U/US  
125  
75  
75  
75  
75  
150  
100  
75  
75  
75  
4.5  
4.0  
4.0  
5.0  
5.0  
2.5  
2.5  
2.5  
3.0  
5.0  
2.5  
300  
Note 1: 8.3ms surge, half sine wave  
*Sensitron space equivalent diodes are manufactured and screened to MIL-PRF-19500 flow and guidelines starting  
from wafer fabrication through assembly and testing using our internal specification.  
©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681  
Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com sales@sensitron.com  

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