Datasheet > JANTXV1N6666R

JANTXV1N6666R

更新时间： 2024-11-25 19:07:03

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
12页	113K
描述
Rectifier Diode, 1A, 200V V(RRM),

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JANTXV1N6666R 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.49
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	1.5 V
最大非重复峰值正向电流：	100 A	最高工作温度：	200 °C
最大输出电流：	1 A	最大重复峰值反向电压：	200 V
最大反向恢复时间：	0.035 µs	子类别：	Rectifier Diodes
表面贴装：	NO	Base Number Matches：	1

JANTXV1N6666R 数据手册

* METRIC

The documentation and process conversion measures

necessary to comply shall with this document shall be completed

by 3 March 2011.

MIL-PRF-19500/594B

3 December 2010

SUPERSEDING

MIL-PRF-19500/594A

3 July 1998

PERFORMANCE SPECIFICATION SHEET

* SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

ULTRA FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THROUGH 1N6666, AND

1N6664R THROUGH 1N6666R, JAN, JANTX, JANTXV, AND JANS

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for a silicon, fast recovery power rectifier

diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (TO-257AA).

1.3 Maximum ratings (for each leg).

Types

V_R

I_O(1)

I_FSM

t_rr

T_STG

and

V_RWM

T_C= +100°C

t_p= 8.3 ms

and

T_OP

V dc

100

150

200

A dc

1N6664,

+200°C

-65°C

1N6664R

1N6665,

1N6665R

1N6666,

1N6666R

(1) Derate linearly, 100 mA/°C from +100°C to +200°C.

Storage temperature: T_STG= -65°C to +200°C.

Operating temperature: T_J= -65°C to +200°C.

Barometric pressure reduced (altitude operation): 8 mm Hg.

R_θ_JC= 2.5°C/W maximum.

* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,

ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since contact

information can change, you may want to verify the currency of this address information using the ASSIST Online

database at https://assist.daps.dla.mil .

AMSC N/A

FSC 5961

12 3 4 5 6 7...12

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与JANTXV1N6666R相关器件

型号	品牌	获取价格	描述	数据表
JANTXV1N6672	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 15A, 300V V(RRM), Silicon, TO-254AA, TO-254, 3 PIN
JANTXV1N6672R	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 2 Element, 15A, Silicon, TO-254AA, HERMETIC, TO-254, 3 PIN
JANTXV1N6673	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 15A, 400V V(RRM), Silicon, TO-254AA, TO-254, 3 PIN
JANTXV1N6673R	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 15A, Silicon, TO-254AA, HERMETIC, TO-254, 3 PIN
JANTXV1N6674	MICROSEMI	获取价格	暂无描述
JANTXV1N6674R	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 2 Element, 15A, Silicon, TO-254AA, HERMETIC, TO-254, 3 PIN
JANTXV1N6677UR-1	CDI-DIODE	获取价格	Rectifier Diode, Schottky, 1 Element, 0.2A, Silicon, DO-213AA, HERMETIC SEALED PACKAGE-2
JANTXV1N6702	CDI-DIODE	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, Silicon, HERMETIC SEALED, SIMILAR TO DO
JANTXV1N6702	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 40V V(RRM), Silicon,
JANTXV1N6702US	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 40V V(RRM), Silicon,

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