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JANTXV1N6702US PDF预览

JANTXV1N6702US

更新时间: 2024-11-25 21:20:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
2页 222K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 40V V(RRM), Silicon,

JANTXV1N6702US 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:O-LELF-R2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.82
其他特性:METALLURGICALLY BONDED应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.47 VJESD-30 代码:O-LELF-R2
JESD-609代码:e0最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:2最高工作温度:125 °C
最大输出电流:5 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
参考标准:MIL最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Lead (Sn/Pb)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

JANTXV1N6702US 数据手册

 浏览型号JANTXV1N6702US的Datasheet PDF文件第2页 

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