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JANTXV1N6775

更新时间: 2024-11-05 15:35:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 快速恢复能力电源超快恢复二极管快速恢复二极管局域网超快速恢复能力电源
页数 文件大小 规格书
1页 46K
描述
Rectifier Diode, 1 Phase, 1 Element, 15A, 100V V(RRM), Silicon, TO-257, SIMILAR TO TO-257, 2 PIN

JANTXV1N6775 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-257
包装说明:S-XSFM-P2针数:3
Reach Compliance Code:compliantHTS代码:8541.10.00.80
风险等级:5.38应用:ULTRA FAST RECOVERY POWER
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:TO-257
JESD-30 代码:S-XSFM-P2JESD-609代码:e0
最大非重复峰值正向电流:180 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:15 A封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Qualified
参考标准:MIL-19500/646A最大重复峰值反向电压:100 V
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

JANTXV1N6775 数据手册

  
TECHNICAL DATA  
ULTRAFAST SILICON POWER RECTIFIER  
Qualified per MIL-PRF-19500/ 646  
Devices  
Qualified Level  
JAN  
1N6774  
1N6775  
1N6776  
1N6777  
JANTX  
JANTXV  
MAXIMUM RATINGS  
Ratings  
Working Peak Reverse Voltage  
1N6774 1N6775 1N6776 1N6777  
Symbol  
VRWM  
IF  
Unit  
Vdc  
50  
100  
150  
200  
TC = +100°C(1)  
15  
Adc  
Apk  
0C  
Forward Current  
Forward Current Surge Peak TP = 8.30C  
180  
IFSM  
Operating & Storage Junction Temperature  
-65 to +150  
Top, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
TO-257*  
(2-PIN-ISOLATED)  
Thermal Resistance, Junction-to-Case  
2.0  
0C/W  
R
qJC  
qJA  
Thermal Resistance, Junction-to-Ambient  
1) Derate at 300 mA/0C above TC = +1000C  
40  
0C/W  
R
*See appendix A for  
package  
ELECTRICAL CHARACTERISTICS (TC = +250C Unless Otherwise Noted)  
outline  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
Forward Voltage  
IF = 8.0 Adc, pulsed  
IF = 15 Adc, pulsed  
Reverse Current Leakage  
VR = 0.8 of VRWM  
VF  
Vdc  
1.00  
1.15  
IR  
mAdc  
10  
Thermal Impedance  
t
IM =15 mAdc; IH = 9.9 Adc; H = 200 ms; tMD = 35 ms; VH = 1  
ZØJX  
0C/W  
Vdc  
1.8  
Breakdown Voltage  
IR = 10 mAdc  
1N6774  
1N6775  
1N6776  
1N6777  
50  
Vdc  
VBR  
100  
150  
200  
Junction Capacitance  
CJ  
trr  
pF  
VR = 5.0 Vdc, f = 1.0 MHz  
Reverse Recovery Time  
IF = 1.0 Adc; di/dt = 50 A/ms  
300  
35  
hs  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 1  

JANTXV1N6775 替代型号

型号 品牌 替代类型 描述 数据表
1N6775 MICROSEMI

完全替代

ULTRAFAST SILICON POWER RECTIFIER
JANTX1N6775 MICROSEMI

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Rectifier Diode, 1 Phase, 1 Element, 15A, 100V V(RRM), Silicon, TO-257, SIMILAR TO TO-257,

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