JANTXV1N7066

更新时间： 2024-11-10 17:16:43

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	177K
描述
10 A, 100 V Hyperfast Recovery Rectifier

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数据手册

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JANTXV1N7066 数据手册

PRELIMINARY

1N7066 thru 1N7068

and

1N7066SMS thru 1N7068SMS

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

10 AMP

50 ─ 150 VOLTS

Designer’s Data Sheet

30 ns HYPERFAST RECOVERY

RECTIFIER

Part Number/Ordering Information ^1/

1N70 __ __ __

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV

│

└

│

└

FEATURES:

•

Hyper Fast Reverse Recovery: 30ns Maximum^4/

High Surge Current: 325 A Maximum

Hermetically Sealed

S = S Level

Low Forward Voltage Drop .95 @10A

Void Free Chip Construction

Solid Silver Leads

Package Type

__ = Axial Leaded

SMS = Surface Mount Square Tab

Available in Axial & Square Tab Versions

TX, TXV, and S-Level Screening Available ^2/

Axial Lead Higher Current Replacements for:

1N5807, 1N5809, 1N5811

Possible SMS Replacements for Stud Mount :

1N5812, 1N5814, 1N5816

Voltage/Family

66= 50V

67 = 100V

•

68 = 150V

MAXIMUM RATINGS ^3/

RATING

SYMBOL VALUE

UNIT

Peak Repetitive Reverse

Voltage

1N7066

1N7067

1N7068

V_RRM

V_RWM

V_R

100

150

Volts

And

DC Blocking Voltage

Average Rectified Forward Current (Axial TL ≤ 55°C; SMS TEC ≤ 100°C ) ^5/

I_O

Amps

Peak Surge Current

(8.3 ms pulse, half sine wave, superimposed on Io, allow

junction to reach equilibrium between pulses, T_A= 25°C)

325

I_FSM

T_Jand

T_STG

-65 to +175

Operating & Storage Temperature

°C

Junction to Lead for Axial, L =.125"

Junction to End Tab for Surface Mount

R_θJL

R_θJE

4.5

Thermal Resistance

°C/W

NOTES:

1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.

2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.

3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.

4/ I_F= 1A, I_R= 1A, I_RR= 0.1A, T_A= 25°C

Axial Leaded

SMS

5/ Operating at higher Io currents may be achieved based on specific application

and device mounting if Tj is maintained below 175ºC.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RC0119C

DOC

中文翻译

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与JANTXV1N7066相关器件

型号	品牌	获取价格	描述	数据表
JANTXV1N7066US	SSDI	获取价格	10 A, 100 V Hyperfast Recovery Rectifier
JANTXV1N7067	SSDI	获取价格	10 A, 150 V Hyperfast Recovery Rectifier
JANTXV1N7067US	SSDI	获取价格	10 A, 150 V Hyperfast Recovery Rectifier
JANTXV1N7068	SSDI	获取价格	10 A, 200 V Hyperfast Recovery Rectifier
JANTXV1N7068US	SSDI	获取价格	10 A, 200 V Hyperfast Recovery Rectifier
JANTXV1N7069T1	INFINEON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 100V V(RRM), Silicon, TO-254AA, HERMETIC SE
JANTXV1N7070CCT3	INFINEON	获取价格	16A 100V Hi-Rel Schottky Common Cathode Diode in a TO-257AA package DLA Number 1N7070CCT3
JANTXV1N7078U3	INFINEON	获取价格	30V 30A Hi-Rel Schottky Discrete Diode in a SMD-0.5 package DLA Number 1N7078U3 - JANTXV C
JANTXV1N746	MICROSEMI	获取价格	SILICON 400 mW ZENER DIODES
JANTXV1N746-1	MICROSEMI	获取价格	SILICON 400 mW ZENER DIODES

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