是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DO-35 |
包装说明: | HERMETIC SEALED, GLASS PACKAGE-2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.70 | 风险等级: | 5.57 |
Is Samacsys: | N | 其他特性: | METALLURGICALLY BONDED |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JEDEC-95代码: | DO-35 | JESD-30 代码: | O-LALF-W2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最大输出电流: | 0.075 A |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Qualified | 参考标准: | MIL-19500/444 |
表面贴装: | NO | 技术: | SCHOTTKY |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | AXIAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTXV1N6858-1E3 | MICROSEMI |
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Schottky Barrier Diode Qualified per MIL-PRF-19500/444 | |
JANTXV1N6858UR-1 | MICROSEMI |
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Rectifier Diode, Schottky, 1 Element, 0.075A, Silicon, DO-213AA, HERMETIC SEALED, LEADLESS | |
JANTXV1N6912UTK2AS | MICROSEMI |
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 25A, 45V V(RRM), Silicon, | |
JANTXV1N7037CCU1 | MICROSEMI |
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SILICON DUAL SCHOTTKY POWER RECTIFIER 35 Amp, 100 Volt | |
JANTXV1N7038U3 | INFINEON |
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30A 150v Hi-Rel Schottky Discrete Diode in a SMD-0.5 package DLA Number 1N7038U3 - JANTXV | |
JANTXV1N7039CCT1 | INFINEON |
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Rectifier Diode, Schottky, 1 Phase, 2 Element, 35A, 150V V(RRM), Silicon, TO-254AA, HERMET | |
JANTXV1N7043CAT1 | INFINEON |
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SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES | |
JANTXV1N7043CCT1 | MICROSEMI |
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Rectifier Diode, Schottky, 1 Phase, 2 Element, 35A, 100V V(RRM), Silicon, TO-254AA, HERMET | |
JANTXV1N7043CCT1 | INFINEON |
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Rectifier Diode, Schottky, 1 Phase, 2 Element, 35A, 100V V(RRM), Silicon, TO-254AA, HERMET | |
JANTXV1N7045T3 | INFINEON |
获取价格 |
SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES |