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JANTXV1N6763 PDF预览

JANTXV1N6763

更新时间: 2024-11-05 21:17:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 快速恢复能力电源超快恢复二极管快速恢复二极管局域网超快速恢复能力电源
页数 文件大小 规格书
2页 85K
描述
Rectifier Diode, 1 Phase, 2 Element, 12A, 100V V(RRM), Silicon, TO-254AA, TO-254AA, 3 PIN

JANTXV1N6763 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-254AA
包装说明:S-PSFM-P3针数:3
Reach Compliance Code:compliantHTS代码:8541.10.00.80
风险等级:5.42Is Samacsys:N
应用:POWER外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-254AA
JESD-30 代码:S-PSFM-P3JESD-609代码:e0
最大非重复峰值正向电流:165 A元件数量:2
相数:1端子数量:3
最大输出电流:12 A封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Qualified
参考标准:MIL-19500/642最大重复峰值反向电压:100 V
最大反向恢复时间:0.035 µs表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:PIN/PEG
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

JANTXV1N6763 数据手册

 浏览型号JANTXV1N6763的Datasheet PDF文件第2页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
DUAL ULTRAFAST POWER RECTIFIER  
Qualified per MIL-PRF-19500/642  
DEVICES  
LEVELS  
JAN  
JANTX  
JANTXV  
1N6762  
1N6763  
1N6764  
1N6765  
1N6762R  
1N6763R  
1N6764R  
1N6765R  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
1N6762, R  
50  
100  
150  
200  
12  
1N6763, R  
1N6764, R  
1N6765, R  
TC = +100°C  
VRWM  
Vdc  
Average Forward Current (1)  
Peak Surge Forward Current  
IF  
Adc  
TO-254  
IFSM  
Rθjc  
165  
2.0  
A(pk)  
°C/W  
Thermal Resistance - Junction to Case  
Note:  
(1) Derate @ 240mA/°C above TC = 100°C  
(2) Each individual diode  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
1N6762, R  
50  
Breakdown Voltage (2)  
IR = 10µAdc  
1N6763, R  
1N6764, R  
1N6765, R  
100  
150  
200  
VBR  
Vdc  
Forward Voltage (2)  
IF = 6Adc  
IF = 12Adc  
VF1  
VF2  
0.95  
1.05  
Vdc  
Reverse Leakage Current  
VR = 50V  
VR = 100V  
VR = 150V  
VR = 200V  
1N6762, R  
1N6763, R  
1N6764, R  
1N6765, R  
IR1  
10  
µAdc  
Reverse Leakage Current  
VR = 50V  
VR = 100V  
VR = 150V  
VR = 200V  
TA = 100°C  
1N6762, R  
1N6763, R  
1N6764, R  
1N6765, R  
TA = 100°C  
TA = 100°C  
TA = 100°C  
IR2  
500  
µAdc  
Reverse Recovery Time  
IF = 1.0A, di/dt = 50A/µs  
trr  
35  
nS  
pF  
Junction Capacitance  
VR = 5Vdc, f = 1.0MHz  
CJ  
300  
T4-LDS-0172 Rev. 1 (101036)  
Page 1 of 2  

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