5秒后页面跳转
JANTX1N6642U PDF预览

JANTX1N6642U

更新时间: 2024-01-06 14:38:14
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管开关
页数 文件大小 规格书
2页 46K
描述
SWITCHING DIODES

JANTX1N6642U 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active包装说明:SURFACEMOUNT PACKAGE-2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.22Is Samacsys:N
其他特性:METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JESD-30 代码:O-XELF-R2JESD-609代码:e0
最大非重复峰值正向电流:2.5 A元件数量:1
端子数量:2最高工作温度:200 °C
最低工作温度:-65 °C最大输出电流:0.3 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.75 W认证状态:Qualified
参考标准:MIL-19500/578E最大重复峰值反向电压:75 V
最大反向电流:0.5 µA最大反向恢复时间:0.005 µs
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

JANTX1N6642U 数据手册

 浏览型号JANTX1N6642U的Datasheet PDF文件第2页 
• 1N6638US,1N6642US, 1N6643US AVAILABLE IN JAN, JANTX, JANTXV AND JANS  
PER MIL-PRF-19500/578  
• 1N6638U,1N6642U, 1N6643U AVAILABLE IN JAN, JANTX, JANTXV AND JANS  
1N6638U & US  
1N6642U & US  
1N6643U & US  
PER MIL-PRF-19500/578  
• SWITCHING DIODES  
• NON-CAVITY GLASS PACKAGE  
• METALLURGICALLY BONDED  
MAXIMUM RATINGS  
Operating Temperature: -65°C to +175°C  
Storage Temperature: -65°C to +175°C  
Operating Current: 300 mA  
Derating: 4.6 mA/°C Above T  
Surge Current: IFSM = 2.5A, half sine wave, P = 8.3ms  
= + 110°C  
EC  
w
MILLIMETERS  
INCHES  
DIM MIN  
MAX  
2.16  
0.71  
4.95  
MIN MAX  
0.070 0.085  
0.019 0.028  
0.165 0.195  
0.003MIN.  
D
F
G
1.78  
0.48  
4.19  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.  
V
V
V
I
V
I
t
t
rr  
S
0.08MIN.  
BR  
@ I  
RWM  
F1  
F2  
@
F2  
fr  
TYPES  
I
I
= 10 mA  
I = 10 mA  
F
R
FM  
F
R
=100 µA  
=10 mA  
FIGURE 1  
(Pulsed)  
(Pulsed)  
=50 mA  
ns  
I
= 1 mA  
REC  
V (pk)  
V (pk)  
V dc  
V dc  
mA  
ns  
1N6638U & US  
1N6642U & US  
1N6643U & US  
150  
100  
75  
125  
75  
0.8  
0.8  
1.0  
1.1  
1.2  
1.2  
200  
100  
100  
20  
20  
20  
4.5  
5.0  
6.0  
DESIGN DATA  
50  
CASE: D-5D, Hermetically sealed glass  
case, per MIL-PRF- 19500/578  
LEAD FINISH: Tin / Lead  
I
I
I
I
C
C
R1  
R2  
V
R3  
R4  
T1  
T2  
TYPES  
THERMAL RESISTANCE: (R  
50 °C/W maximum at L = 0  
):  
OJEC  
V
V
= 20 V  
V
= V  
V
=
V
=
R
R
@
R
R
R
RWM  
R
= 20 V  
= V  
T
= 150°C  
T = 150°C  
A
0V  
1.5V  
RWM  
A
THERMAL IMPEDANCE: (Z  
°C/W maximum  
): 25  
nA dc  
µA dc  
µA dc  
µA dc  
pF  
pF  
JX  
O
1N6638U & US  
1N6642U & US  
1N6643U & US  
35  
25  
50  
0.5  
0.5  
0.5  
50  
50  
75  
100  
100  
160  
2.5  
5.0  
5.0  
2.0  
2.8  
2.8  
POLARITY: Cathode end is banded.  
MOUNTING SURFACE SELECTION:  
The Axial Coefficient of Expansion  
(COE) of this device is approximately  
+ 4PPM / °C. The COE of the Mounting  
Surface System should be selected to  
provide a suitable match with this  
device.  
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841  
PHONE (978) 620-2600  
FAX (781) 689-0803  
WEBSITE: http://www.microsemi.com  
157  

JANTX1N6642U 替代型号

型号 品牌 替代类型 描述 数据表
1N6642US MICROSEMI

类似代替

COMPUTER SWITCHING DIODE
1N6642U MICROSEMI

功能相似

SWITCHING DIODES
JANTXV1N6642US MICROSEMI

功能相似

COMPUTER SWITCHING DIODE

与JANTX1N6642U相关器件

型号 品牌 获取价格 描述 数据表
JANTX1N6642UB MICROSEMI

获取价格

Rectifier Diode, 1 Element, 0.3A, 100V V(RRM), Silicon, CERAMIC PACKAGE-3
JANTX1N6642UB2R MICROSEMI

获取价格

Rectifier Diode, 1 Element, 0.3A, 100V V(RRM), Silicon, CERAMIC PACKAGE-3
JANTX1N6642UBCA MICROSEMI

获取价格

Rectifier Diode, 2 Element, 0.3A, 100V V(RRM), Silicon, CERAMIC PACKAGE-3
JANTX1N6642UBCC MICROSEMI

获取价格

Rectifier Diode, 2 Element, 0.3A, 100V V(RRM), Silicon, CERAMIC PACKAGE-3
JANTX1N6642US MICROSEMI

获取价格

COMPUTER SWITCHING DIODE
JANTX1N6642US SENSITRON

获取价格

Rectifier Diode, 1 Element, 0.3A, 75V V(RRM), Silicon, SURFACEMOUNT PACKAGE-2
JANTX1N6643 MICROSEMI

获取价格

COMPUTER SWITCHING DIODE
JANTX1N6643 SEMTECH

获取价格

Rectifier Diode, 1 Element, 0.3A, 50V V(RRM), Silicon, SIMILAR TO DO-35, 2 PIN
JANTX1N6643 SENSITRON

获取价格

Small Signal/Switching Diodes
JANTX1N6643R MICROSEMI

获取价格

Rectifier Diode, 1 Element, 0.3A, 75V V(RRM), Silicon,