生命周期: | Obsolete | 包装说明: | O-LALF-W2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.83 |
其他特性: | RADIATION HARDENED | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | ZENER DIODE | JEDEC-95代码: | DO-7 |
JESD-30 代码: | O-LALF-W2 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 最大功率耗散: | 0.475 W |
认证状态: | Not Qualified | 参考标准: | MIL-19500/159 |
标称参考电压: | 6.2 V | 表面贴装: | NO |
技术: | ZENER | 端子形式: | WIRE |
端子位置: | AXIAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
电压温度Coeff-Max: | 0.031 mV/ °C | 最大电压容差: | 4.83% |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
JANTXV-1RH829A | MICROSEMI | Zener Diode, 6.2V V(Z), 4.83%, 0.475W, Silicon, DO-7 |
获取价格 |
|
JANTXV22GQ100 | INFINEON | Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 100V V(RRM), Silicon, TO-254AA |
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JANTXV2M | SEMTECH | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 |
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JANTXV2N0718A | MICROSEMI | Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, |
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|
JANTXV2N0918 | RAYTHEON | Small Signal Bipolar Transistor, 1-Element, Silicon, TO-72, |
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|
JANTXV2N1131L | MICROSEMI | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, T |
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