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JANTXV2N1132L PDF预览

JANTXV2N1132L

更新时间: 2024-01-07 21:51:55
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体管
页数 文件大小 规格书
3页 125K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN

JANTXV2N1132L 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-MBCY-W3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
外壳连接:COLLECTOR最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):30JEDEC-95代码:TO-5
JESD-30 代码:O-MBCY-W3元件数量:1
端子数量:3封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP认证状态:Not Qualified
参考标准:MIL-19500表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管元件材料:SILICONBase Number Matches:1

JANTXV2N1132L 数据手册

 浏览型号JANTXV2N1132L的Datasheet PDF文件第2页浏览型号JANTXV2N1132L的Datasheet PDF文件第3页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
LOW POWER PNP SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/177  
DEVICES  
LEVELS  
JAN  
JANTX  
JANTXV  
2N1131  
2N1131L  
2N1132  
2N1132L  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
40  
Unit  
Vdc  
Collector-Base Voltage  
Emitter-Base Voltage  
50  
Vdc  
5.0  
Vdc  
Collector Current  
600  
mAdc  
Total Power Dissipation  
@ TA = +25°C (1)  
@ TC = +25°C (2)  
0.6  
2.0  
PT  
W
TO-39  
2N1131, 2N1132  
Operating & Storage Junction Temperature Range  
TJ, Tstg  
-65 to +200  
°C  
NOTES:  
1/ Derate linearly 3.43mW/°C for TA > +25°C  
2/ Derate linearly 11.4mW/°C for TC > +25°C  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERTICS  
Symbol  
Min.  
Max.  
Unit  
Collector-Emitter Breakdown Voltage  
IC = 10mAdc  
V(BR)CEO  
Vdc  
Vdc  
40  
50  
Collector- Base Breakdown Voltage  
IC = 10µAdc  
TO-5  
2N1131L, 2N1132L  
V(BR)CBO  
Emitter-Base Cutoff Current  
VEB = 5.0Vdc  
IEBO  
100  
10  
µAdc  
mAdc  
Collector-Emitter Cutoff Current  
ICER  
VCE = 50Vdc, RBE 10 ohms  
Collector-Base Cutoff Current  
VCB = 50Vdc  
10  
1.0  
µAdc  
ICBO  
V
CB = 30Vdc  
T4-LDS-0187 Rev. 1 (101882)  
Page 1 of 3  

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