是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | S-XSFM-P3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.74 |
应用: | GENERAL PURPOSE | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JEDEC-95代码: | TO-254AA |
JESD-30 代码: | S-XSFM-P3 | JESD-609代码: | e0 |
最大非重复峰值正向电流: | 400 A | 元件数量: | 1 |
相数: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
最大输出电流: | 30 A | 封装主体材料: | UNSPECIFIED |
封装形状: | SQUARE | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
参考标准: | MIL-19500 | 最大重复峰值反向电压: | 100 V |
表面贴装: | NO | 技术: | SCHOTTKY |
端子面层: | TIN LEAD | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
JANTXV2M | SEMTECH | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 |
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JANTXV2N0718A | MICROSEMI | Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, |
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JANTXV2N0918 | RAYTHEON | Small Signal Bipolar Transistor, 1-Element, Silicon, TO-72, |
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JANTXV2N1131L | MICROSEMI | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, T |
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JANTXV2N1132 | MICROSEMI | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, |
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JANTXV2N1132L | MICROSEMI | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, T |
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