是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | MELF |
包装说明: | O-LELF-R2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.70 | 风险等级: | 5.82 |
其他特性: | METALLURGICALLY BONDED | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | O-LELF-R2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最大输出电流: | 0.25 A |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 参考标准: | MIL-19500/279 |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | WRAP AROUND | 端子位置: | END |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTX1N3657 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS PACKAGE-2 | |
JANTX1N3657US | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS, MELF-2 | |
JANTX1N3666-1 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.07A, 80V V(RRM), Germanium, | |
JANTX1N3666-1X | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 80V V(RRM), Germanium, | |
JANTX1N3670A | VISHAY |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 12A, 700V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN | |
JANTX1N3670RA | VISHAY |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 12A, 700V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN | |
JANTX1N3671A | INFINEON |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 12A, 800V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN | |
JANTX1N3671A | VISHAY |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 12A, 800V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN | |
JANTX1N3671A | MICROSEMI |
获取价格 |
Military Silicon Power Rectifier | |
JANTX1N3671AR | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 12A, 800V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 P |