是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | MELF | 包装说明: | O-LELF-R2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.80 |
风险等级: | 5.84 | 其他特性: | METALLURGICALLY BONDED |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | O-LELF-R2 | JESD-609代码: | e0 |
湿度敏感等级: | NOT SPECIFIED | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
最低工作温度: | -65 °C | 最大输出电流: | 1 A |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 参考标准: | MIL-19500/286 |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | WRAP AROUND | 端子位置: | END |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTX1N3666-1 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.07A, 80V V(RRM), Germanium, | |
JANTX1N3666-1X | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 80V V(RRM), Germanium, | |
JANTX1N3670A | VISHAY |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 12A, 700V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN | |
JANTX1N3670RA | VISHAY |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 12A, 700V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN | |
JANTX1N3671A | INFINEON |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 12A, 800V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN | |
JANTX1N3671A | VISHAY |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 12A, 800V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN | |
JANTX1N3671A | MICROSEMI |
获取价格 |
Military Silicon Power Rectifier | |
JANTX1N3671AR | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 12A, 800V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 P | |
JANTX1N3671RA | MICROSEMI |
获取价格 |
暂无描述 | |
JANTX1N3672A | INFINEON |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 12A, 900V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN |