Datasheet > JANTV1N6074

JANTV1N6074

更新时间： 2024-02-23 04:37:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
3页	294K
描述
Rectifier Diode, Avalanche, 1 Element, 0.85A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS, A PACKAGE-2

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JANTV1N6074 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	O-LALF-W2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.77
其他特性：	HIGH RELIABILITY	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JESD-30 代码：	O-LALF-W2
JESD-609代码：	e0	元件数量：	1
端子数量：	2	最高工作温度：	155 °C
最低工作温度：	-65 °C	最大输出电流：	0.85 A
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified	参考标准：	MIL-19500
最大重复峰值反向电压：	100 V	最大反向恢复时间：	0.03 µs
表面贴装：	NO	技术：	AVALANCHE
端子面层：	TIN LEAD	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

JANTV1N6074 数据手册

1N6073 thru 1N6081

VOIDLESS HERMETICALLY SEALED

ULTRA FAST RECOVERY GLASS

POWER RECTIFIERS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-

19500/503 and is ideal for high-reliability applications where a failure cannot be

tolerated. These industry-recognized 3, 6, and 12 Amp rated rectifiers (T_L=70ºC) in

different package sizes for working peak reverse voltages from 50 to 150 volts are

hermetically sealed with voidless-glass construction using an internal “Category I”

metallurgical bond. These devices are also available in surface mount MELF

package configurations by adding a “US” suffix (see separate data sheet for

1N6073US thru 1N6081US). Microsemi also offers numerous other rectifier

products to meet higher and lower current ratings with various recovery time speed

requirements including standard, fast and ultrafast device types in both through-hole

and surface mount packages.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Popular JEDEC registered 1N6073 to 1N6081 series

Voidless hermetically sealed glass package

Extremely robust construction

•

Ultrafast recovery rectifier series 50 to 150 V

Military and other high-reliability applications

Switching power supplies or other applications

requiring extremely fast switching & low forward

loss

High forward surge current capability

Low thermal resistance

Triple-layer passivation

Internal “Category I” Metallurgical bonds

•

JAN, JANTX, and JANTXV available for 1N6074 and

1N6075 per MIL-PRF-19500/503

Controlled avalanche with peak reverse power

capability

•

Further options for screening in accordance with MIL-

PRF-19500 for JAN, JANTX, JANTXV, or JANS by

using a MQ, MX, MV or SP prefix respectively , e.g.

MX6076, MV6079, SP6081, etc.

•

Inherently radiation hard as described in Microsemi

MicroNote 050

•

Surface mount equivalents also available in a square

end-cap MELF configuration with “US” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Junction Temperature: -65^oC to +155^oC

Storage Temperature: -65^oC to +155^oC

•

CASE: Hermetically sealed voidless hard glass

with Tungsten slugs

Peak Forward Surge Current @ 25^oC: 35 Amps for

1N6073-6075, 75 Amps for 1N6076-6078, and 175

Amps for 1N6079-6081 at 8.3 ms half-sine wave

Average Rectified Forward Current (I_O) at T_L= +70^oC

(L= 0 inch from body):

1N6073 thru 1N6075: 3.0 Amps

1N6076 thru 1N6078: 6.0 Amps

1N6079 thru 1N6081: 12.0 Amps

Average Rectified Forward Current (I_O) at T_A=55^oC:

1N6073 thru 1N6075: 0.85 Amps

1N6076 thru 1N6078: 1.3 Amps

1N6079 thru 1N6081: 2.0 Amps

TERMINATIONS: Axial-leads are Copper with

Tin/Lead (Sn/Pb) finish

•

MARKING: Body painted and part number, etc.

POLARITY: Cathode indicated by band

Tape & Reel option: Standard per EIA-296

Weight: 1N6073 thru 1N6075: 340 mg

1N6076 thru 1N6078: 750 mg

•

1N6079 thru 1N6081: 1270 mg

•

See package dimensions on last page

•

Thermal Resistance L= 0 inch (R_θ_JL): 13^oC/W for

1N6073-6075, 8.5^oC/W for 1N6076-6078, and

5.0^oC/W for 1N6079-6081

Solder temperature: 260^oC for 10 s (maximum)

10-03-2007 REV B

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与JANTV1N6074相关器件

型号	品牌	获取价格	描述	数据表
JANTV1N6075	MICROSEMI	获取价格	Rectifier Diode, Avalanche, 1 Element, 0.85A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS
JANTV2N2919	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,
JANTV2N2919L	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,
JANTV2N2919U	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon,
JANTV2N2920	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,
JANTV2N2920L	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,
JANTV2N2920U	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon,
JANTV2N3810	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, SIMILA
JANTV2N3810L	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, SIMILA
JANTV2N3810U	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon,

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