Datasheet > JANTX(V)2N6796U

JANTX(V)2N6796U

更新时间： 2024-01-13 20:36:04

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JANTX(V)2N6796U 数据手册

Provisional Data Sheet No. PD - 9.1666A

IRFE130

REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796U

HEXFET^®TRANSISTOR

JANTXV2N6796U

[REF:MIL-PRF-19500/557]

N-CHANNEL

Product Summary

100Volt, 0.18Ω, HEXFET

The leadless chip carrier (LCC) package represents

the logical next step in the continual evolution of

surface mount technology. The LCC provides

designers the extra flexibility they need to increase

circuit board density. International Rectifier has

engineered the LCC package to meet the specific

needs of the power market by increasing the size of

the bottom source pad, thereby enhancing the

thermal and electrical performance. The lid of the

package is grounded to the source to reduce RF

interference.

Part Number

BVDSS

RDS(on)

IRFE130

100V

0.18Ω

8.0A

Features:

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling

Small footprint

Surface Mount

Lightweight

HEXFET transistors also feature all of the well-es-

tablished advantages of MOSFETs, such as volt-

age control, very fast switching, ease of paralleling

and electrical parameter temperature stability.They

are well-suited for applications such as switching

power supplies, motor controls, inverters, choppers,

audio amplifiers and high-energy pulse circuits, and

virtually any application where high reliability is re-

quired.

Absolute Maximum Ratings

Parameter

IRFE130, JANTX-, JANTXV-, 2N6796U Units

@ V

= 10V, T = 25°C Continuous Drain Current

8.0

@ V

= 10V, T = 100°C Continuous Drain Current

5.0

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

W/K ꢀ

0.17

±20

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

134

dv/dt

8.3

V/ns

-55 to 150

^oC

Storage Temperature Range

STG

300 ( for 5 seconds)

0.42 (typical)

Surface Temperature

Weight

11/13/97

12 3 4 5 6 7 8

中文翻译

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与JANTX(V)2N6796U相关器件

型号	品牌	获取价格	描述	数据表
JANTX0M	SEMTECH	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
JANTX11N4728CUR-1	MICROSEMI	获取价格	Zener Diode, 3.3V V(Z), 2%, 1W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLASS,
JANTX11N4728UR-1	MICROSEMI	获取价格	Zener Diode, 3.3V V(Z), 10%, 1W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLASS
JANTX11N4729AUR-1	MICROSEMI	获取价格	Zener Diode, 3.6V V(Z), 5%, 1W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLASS,
JANTX11N4729UR-1	MICROSEMI	获取价格	Zener Diode, 3.6V V(Z), 10%, 1W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLASS
JANTX11N4730AUR-1	MICROSEMI	获取价格	Zener Diode, 3.9V V(Z), 5%, 1W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLASS,
JANTX11N4730CUR-1	MICROSEMI	获取价格	Zener Diode, 3.9V V(Z), 2%, 1W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLASS,
JANTX11N4730DUR-1	MICROSEMI	获取价格	Zener Diode, 3.9V V(Z), 1%, 1W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLASS,
JANTX11N4730UR-1	MICROSEMI	获取价格	Zener Diode, 3.9V V(Z), 10%, 1W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLASS
JANTX11N4731CUR-1	MICROSEMI	获取价格	Zener Diode, 4.3V V(Z), 2%, 1W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLASS,

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