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JANTV2N3811U PDF预览

JANTV2N3811U

更新时间: 2024-01-28 15:39:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 光电二极管晶体管
页数 文件大小 规格书
5页 305K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon

JANTV2N3811U 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.62最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:60 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):250JESD-30 代码:R-PDSO-N6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified参考标准:MIL-19500
表面贴装:YES端子形式:NO LEAD
端子位置:DUAL晶体管元件材料:SILICON
Base Number Matches:1

JANTV2N3811U 数据手册

 浏览型号JANTV2N3811U的Datasheet PDF文件第2页浏览型号JANTV2N3811U的Datasheet PDF文件第3页浏览型号JANTV2N3811U的Datasheet PDF文件第4页浏览型号JANTV2N3811U的Datasheet PDF文件第5页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
PNP SILICON DUAL TRANSISTOR  
Qualified per MIL-PRF-19500 /336  
DEVICES  
LEVELS  
JAN  
2N3810  
2N3811  
2N3810L  
2N3810U  
2N3811L  
2N3811U  
JANTX  
JANTV  
JANS  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
60  
Unit  
Vdc  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
60  
Vdc  
5.0  
50  
Vdc  
mAdc  
One  
Both  
Section 1 Sections 2  
PT  
200 350  
mW  
°C  
Total Power Dissipation @ TA = +25°C  
TO-78  
Operating & Storage Junction Temperature Range  
TJ, Tstg  
-65 to +200  
NOTES:  
1. Derate linearly 1.143mW/°C for TA > +25°C (one section)  
2. Derate linearly 2.000mW/°C for TA > +25°C (both sections)  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERTICS  
Symbol  
Min.  
Max.  
Unit  
Collector-Emitter Breakdown Voltage  
V(BR)CEO  
60  
Vdc  
IC = 100μAdc  
U - Package  
Collector-Base Cutoff Current  
VCB = 50Vdc  
VCB = 60Vdc  
ηAdc  
μAdc  
10  
10  
ICBO  
Emitter-Base Cutoff Current  
VEB = 4.0Vdc  
VEB = 5.0Vdc  
10  
10  
ηAdc  
μAdc  
IEBO  
T4-LDS-0118 Rev. 2 (110152)  
Page 1 of 5  

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