Datasheet > JANTV2N5666U3

JANTV2N5666U3

更新时间： 2024-11-12 10:55:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	113K
描述
Power Bipolar Transistor,

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数据手册

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JANTV2N5666U3 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN POWER SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/455

DEVICES

LEVELS

2N5664

2N5665

2N5666

2N5666S

2N5666U3

2N5667

2N5667S

JAN

JANTX

JANTV

JANS

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

2N5664

2N5666, S 2N5667, S

2N5665

Parameters / Test Conditions

Symbol

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Base Current

V_CEO

V_CBO

V_EBO

I_B

200

250

300

400

Vdc

Adc

TO-66 (TO-213AA)

2N5664, 2N5665

6.0

1.0

5.0

Collector Current

I_C

2N5664 2N5666, S

2N5665 2N5667, S

2N5666U3

Total

Power Dissipation

@ T_A= +25°C

@ T_C= +100°C

2.5

1.2

1.5

P_T

Operating & Storage Junction

Temperature Range

TO-5

2N5666, 2N5667

T_J, T_stg

-65 to +200

°C

Note: 1) Consult 19500/455 for thermal derating curves.

ELECTRICAL CHARACTERISTICS (T_C= +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

OFF CHARACTERTICS

Collector-Emitter Breakdown Voltage

TO-39 (TO-205AD)

2N5666S, 2N5667S

I_C= 10mAdc

2N5664, 2N5666

250

400

V_(BR)CER

V_(BR)EBO

I_CES

Vdc

2N5665, 2N5667

Emitter-Base Breakdown Voltage

6.0

I_E= 10μAdc

Collector-Emitter Cutoff Current

V_CE= 200Vdc

2N5664, 2N5666

2N5665, 2N5667

0.2

μAdc

V_CE= 300Vdc

U-3

2N5666U3

Collector-Base Cutoff Current

V_CB= 200Vdc

2N5664, 2N5666

2N5665, 2N5667

0.1

1.0

μAdc

_CB= 250Vdc

V_CB= 300Vdc

_CB= 400Vdc

mAdc

I_CBO

0.1

1.0

μAdc

mAdc

T4-LDS-0062 Rev. 1 (081095)

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