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JANSR2N7616UBC

更新时间: 2023-02-26 15:38:22
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 215K
描述
Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SELALED, UBC-4

JANSR2N7616UBC 数据手册

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IRHLUB770Z4, JANSR2N7616UB  
Pre-Irradiation  
60  
50  
40  
30  
20  
10  
0
10  
OPERATION IN THIS AREA  
LIMITED BY R (on)  
I
D
DS  
TOP  
0.4A  
0.5A  
BOTTOM 0.8A  
1
0.1  
100µs  
1ms  
10ms  
Tc = 25°C  
Tj = 150°C  
Single Pulse  
DC  
0.01  
0.1  
1
10  
100  
1000  
25  
50  
75  
100  
125  
150  
V
, Drain-to-Source Voltage (V)  
DS  
Starting T , Junction Temperature (°C)  
J
Fig 13. Maximum Safe Operating Area  
Fig 14. Maximum Avalanche Energy  
Vs. DrainCurrent  
1000  
100  
10  
D = 0.50  
0.20  
0.10  
0.05  
P
DM  
t
1
0.02  
SINGLE PULSE  
( THERMAL RESPONSE )  
t
2
0.01  
1
Notes:  
1. Duty Factor D = t1/t2  
2. Peak Tj = P dm x Zthjc + Tc  
0.1  
1E-005  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
t
, Rectangular Pulse Duration (sec)  
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  
www.irf.com  
7

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