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JANSR2N7616UBC PDF预览

JANSR2N7616UBC

更新时间: 2023-02-26 15:38:22
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 215K
描述
Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SELALED, UBC-4

JANSR2N7616UBC 数据手册

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Pre-Irradiation  
IRHLUB770Z4, JANSR2N7616UB  
12  
10  
8
250  
V
= 0V,  
f = 1MHz  
gd , ds  
GS  
V
V
V
= 48V  
= 30V  
= 12V  
I
= 0.8A  
C
= C + C  
C
SHORTED  
DS  
DS  
DS  
D
iss  
gs  
C
= C  
gd  
rss  
C
= C + C  
ds  
200  
150  
100  
50  
oss  
gd  
C
iss  
6
C
oss  
4
2
FOR TEST CIRCUIT  
SEE FIGURE 17  
C
rss  
0
0
1
10  
100  
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6  
Total Gate Charge (nC)  
V
, Drain-to-Source Voltage (V)  
DS  
Q
G,  
Fig 10. Typical Gate Charge Vs.  
Fig 9. Typical Capacitance Vs.  
Gate-to-SourceVoltage  
Drain-to-SourceVoltage  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
10  
T
= 150°C  
= 25°C  
T
J
J
1
V
= 0V  
GS  
0.1  
25  
50  
75  
100  
125  
°
150  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
T , Case Temperature ( C)  
C
V
, Source-to-Drain Voltage (V)  
SD  
Fig 12. Maximum Drain Current Vs.  
Fig 11. Typical Source-Drain Diode  
CaseTemperature  
ForwardVoltage  
6
www.irf.com  

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