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JANS1N5622/TR

更新时间： 2024-11-06 19:41:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
3页 207K
描述
Rectifier Diode,

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中文翻译

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JANS1N5622/TR 技术参数

是否Rohs认证： 不符合生命周期：Active
Reach Compliance Code：compliant风险等级：5.74
二极管类型：RECTIFIER DIODE峰值回流温度（摄氏度）：NOT SPECIFIED
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

JANS1N5622/TR 数据手册

 浏览型号JANS1N5622/TR的Datasheet PDF文件第2页浏览型号JANS1N5622/TR的Datasheet PDF文件第3页 
1N5614 thru 1N5622  
VOIDLESS-HERMETICALLY-SEALED  
STANDARD RECOVERY GLASS  
RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “standard recovery” rectifier diode series is military qualified to MIL-PRF-  
19500/427 and is ideal for high-reliability applications where a failure cannot be  
tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak  
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-  
glass construction using an internal “Category I” metallurgical bond. These  
devices are also available in surface mount MELF package configurations by  
adding a “US” suffix (see separate data sheet for 1N5614US thru 1N5622US).  
Microsemi also offers numerous other rectifier products to meet higher and lower  
current ratings with various recovery time speed requirements including fast and  
ultrafast device types in both through-hole and surface mount packages.  
“A” Package  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
•
•
Popular JEDEC registered 1N5614 to 1N5622 series  
Voidless hermetically sealed glass package  
Triple-Layer Passivation  
•
•
•
Standard recovery 1 Amp rectifiers 200 to 1000 V  
Military and other high-reliability applications  
General rectifier applications including bridges, half-  
bridges, catch diodes, etc.  
High forward surge current capability  
Extremely robust construction  
Internal “Category I” Metallurgical bonds  
Working Peak Reverse Voltage 200 to 1000 Volts.  
•
•
•
JAN, JANTX, JANTXV, and JANS available per MIL-  
PRF-19500/427  
Low thermal resistance  
•
Controlled avalanche with peak reverse power  
capability  
•
Surface mount equivalents also available in a square  
end-cap MELF configuration with “US” suffix (see  
separate data sheet for 1N5614US thru 1N5622US)  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
Junction & Storage Temperature: -65oC to +200oC  
•
•
CASE: Hermetically sealed voidless hard glass with  
Tungsten slugs (package dimensions on last page)  
TERMINATIONS: Axial leads are copper with  
Tin/Lead (Sn/Pb) finish. Note: Previous JANS  
inventory had solid Silver axial-leads and no finish.  
MARKING: Body paint and part number, etc.  
POLARITY: Cathode band  
Thermal Resistance: 38oC/W junction to lead at 3/8  
inch (10 mm) lead length from body  
Thermal Impedance: 4.5oC/W @ 10 ms heating time  
•
•
Average Rectified Forward Current (IO): 1.0 Amps @  
TA = 55ºC and 0.75 Amps @ TA = 100ºC  
•
•
•
•
•
•
Forward Surge Current: 30 Amps @ 8.3 ms half-sine  
Solder Temperatures: 260ºC for 10 s (maximum)  
TAPE & REEL option: Standard per EIA-296  
WEIGHT: 340 mg  
ELECTRICAL CHARACTERISTICS  
WORKING  
PEAK  
MINIMUM  
BREAKDOWN  
VOLTAGE  
AVERAGE  
RECTIFIED  
CURRENT  
IO @ TA  
FORWARD  
VOLTAGE  
(MAX.)  
REVERSE  
CURRENT  
(MAX.)  
MAXIMUM  
SURGE  
CURRENT  
IFSM  
REVERSE  
RECOVERY  
(NOTE 3)  
trr  
REVERSE  
TYPE  
VF @ 3A  
VOLTAGE VRWM  
VBR @ 50μA  
IR @ VRWM  
(NOTE 2)  
AMPS  
VOLTS  
VOLTS  
VOLTS  
μA  
μs  
55oC  
25oC  
100oC  
25  
25  
25  
25  
25  
1N5614  
1N5616  
1N5618  
1N5620  
1N5622  
200  
400  
600  
800  
1000  
220  
440  
660  
880  
1100  
0.5  
0.5  
0.5  
0.5  
0.5  
30  
30  
30  
30  
30  
2.0  
2.0  
2.0  
2.0  
2.0  
0.8 MIN.  
1.3 MAX.  
NOTE 1: From 1 Amp at TA = 55oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC,  
derate linearly at 7.5 mA/oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal  
resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175 oC.  
NOTE 2: TA = 100oC, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals  
NOTE 3: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A  
Copyright © 2007  
1-15-2007 REV C  
Microsemi  
Scottsdale Division  
Page 1  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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 		Rectifier Diode, Avalanche, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS, D-5A, 2 PIN
JANS1N5623 SEMTECH

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 		Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-7, HERMETIC SEALED PACKAGE-2
JANS1N5623 SENSITRON

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 		MILITARY RECTIFIERS
JANS1N5623US MICROSEMI

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 		Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS PACKAGE-2
JANS1N5711 CDI-DIODE

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 		SCHOTTKY BARRIER DIODES
JANS1N5711-1 CDI-DIODE

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 		SCHOTTKY BARRIER DIODES
JANS1N5711UB MICROSEMI

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 		Rectifier Diode, Schottky, 1 Element, 0.033A, Silicon, LEADLESS, CERAMIC PACKAGE-3
JANS1N5711UBCC MICROSEMI

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 		暂无描述
JANS1N5711UBD MICROSEMI

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 		Rectifier Diode, Schottky, 2 Element, 0.033A, Silicon, ROHS COMPLIANT, LEADLESS, CERAMIC P

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