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JANS1N5711-1 PDF预览

JANS1N5711-1

更新时间： 2024-11-05 23:05:19
品牌 Logo 应用领域
CDI-DIODE 整流二极管
页数 文件大小 规格书
2页 28K
描述
SCHOTTKY BARRIER DIODES

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中文翻译

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JANS1N5711-1 技术参数

生命周期：Transferred包装说明：O-LALF-W2
Reach Compliance Code：unknown风险等级：5.69
Is Samacsys：N其他特性：METALLURGICALLY BONDED
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：DO-35JESD-30 代码：O-LALF-W2
元件数量：1端子数量：2
最大输出电流：0.033 A封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
认证状态：Not Qualified参考标准：MIL-19500/444
表面贴装：NO技术：SCHOTTKY
端子形式：WIRE端子位置：AXIAL
Base Number Matches：1

JANS1N5711-1 数据手册

 浏览型号JANS1N5711-1的Datasheet PDF文件第2页 
1N5711  
1N5711-1  
1N5712-1  
1N6857-1  
1N6858-1  
DSB2810  
DSB5712  
• 1N5711-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS  
PER MIL-PRF-19500/444  
• 1N5712-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS  
PER MIL-PRF-19500/445  
• SCHOTTKY BARRIER DIODES  
• HERMETICALLY SEALED  
• METALLURGICALLY BONDED  
MAXIMUM RATINGS  
Operating Temperature: -65°C to +150°C  
Storage Temperature: -65°C to +150°C  
Operating Current: 5711 types  
2810,5712 & 6858 types :75mA dc@ T  
:33mA dc@ T  
L = +130°C, L = 3/8”  
L = +110°C, L = 3/8”  
:75mA dc@ T  
L = +70°C, L = 3/8”  
6857 TYPE  
all types:  
Derating:  
Derate to 0 (zero)mA@+150°C  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.  
CDI  
TYPE  
MINIMUM  
BREAKDOWN  
VOLTAGE  
MAXIMUM  
FORWARD  
VOLTAGE  
MAXIMUM  
FORWARD  
VOLTAGE  
MAXIMUM REVERSE  
LEAKAGE CURRENT  
MAXIMUM  
ESDS  
CAPACITANCE @ CLASS  
NUMBER  
V
= 0 VOLTS  
f = 1.0 MHZ  
R
VBR @ 10  
A
V
@ 1 mA  
V
@ I  
I
@ V  
C
µ
F
F
F
R
R
T
VOLTS  
20  
VOLTS  
0.41  
0.41  
0.41  
0.41  
0.35  
0.36  
MILLIAMPS  
nA  
100  
200  
150  
150  
150  
200  
VOLTS  
PICO FARADS  
DSB2810  
1N5711,-1  
DSB5712  
1N5712-1  
1N6857-1  
1N6858-1  
1.0@35  
15  
2.0  
2.0  
2.0  
2.0  
4.5  
4.5  
1
1
1
1
2
2
FIGURE 1  
70  
1.0@15  
50  
20  
1.0@35  
16  
20  
1.0@35  
16  
20  
0.75@35  
0.65@15  
16  
DESIGN DATA  
70  
50  
CASE: Hermetically sealed glass case  
per MIL-PRF-19500/444 and /445  
DO-35 Outline  
NOTE: Effective Minority Carrier Lifetime (τ ) is 100 Pico Seconds  
LEAD MATERIAL: Copper clad steel.  
LEAD FINISH: Tin / Lead  
THERMAL RESISTANCE: (R  
˚C/W maximum at L = .375 inch  
): 250  
OJEC  
THERMAL IMPEDANCE: (Z  
): 40  
OJX  
˚C/W maximum  
NOTICE: Qualification testing to M, JX, and JS levels for 6857 and 6858 types is underway.  
Contact the factory for qualification completion dates. These two part numbers are  
being introduced by CDI as “drop-in” replacements for the 5711 and 5712. They  
provide a more robust mechanical design and a higher ESDS class with the only  
trade-off being an increase in capacitance.  
POLARITY: Cathode end is banded.  
MOUNTING POSITION: Any.  
22 COREY STREET, MELROSE, MASSACHUSETTS 02176  
PHONE (781) 665-1071  
WEBSITE: http://www.cdi-diodes.com  
FAX (781) 665-7379  
E-mail: mail@cdi-diodes.com  
12

中文翻译

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与JANS1N5711-1相关器件

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JANS1N5711UB MICROSEMI

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JANS1N5711UBCC MICROSEMI

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JANS1N5711UBD MICROSEMI

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JANS1N5711UR-1 MICROSEMI

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JANS1N5712-1 CDI-DIODE

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JANS1N5712UB MICROSEMI

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 		Rectifier Diode, Schottky, 1 Element, 0.075A, Silicon, ROHS COMPLIANT, LEADLESS, CERAMIC P
JANS1N5712UBCA MICROSEMI

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 		Rectifier Diode, Schottky, 2 Element, 0.075A, Silicon, ROHS COMPLIANT, LEADLESS, CERAMIC P
JANS1N5712UBCC MICROSEMI

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 		Rectifier Diode, Schottky, 2 Element, 0.075A, Silicon, ROHS COMPLIANT, LEADLESS, CERAMIC P
JANS1N5712UBD MICROSEMI

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 		Rectifier Diode, Schottky, 2 Element, 0.075A, Silicon, ROHS COMPLIANT, LEADLESS, CERAMIC P
JANS1N5712UR-1 MICROSEMI

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 		SCHOTTKY BARRIER DIODES

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