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JANS1N5802

更新时间： 2024-09-15 23:05:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管军事功效超快速恢复能力电源超快恢复二极管快速恢复二极管
页数 文件大小 规格书
2页 307K
描述
MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP

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JANS1N5802 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active包装说明：O-LALF-W2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.29
其他特性：HIGH RELIABILITY外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJESD-30 代码：O-LALF-W2
JESD-609代码：e0元件数量：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：1 A
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Qualified参考标准：MIL-19500
最大重复峰值反向电压：50 V最大反向恢复时间：0.025 µs
表面贴装：NO技术：AVALANCHE
端子面层：Tin/Lead (Sn/Pb)端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

JANS1N5802 数据手册

 浏览型号JANS1N5802的Datasheet PDF文件第2页 
1N5802 thru 1N5806  
VOIDLESS-HERMETICALLY-SEALED  
ULTRAFAST RECOVERY GLASS  
RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “ultrafast recovery” rectifier diode series is military qualified to MIL-PRF-  
19500/477 and is ideal for high-reliability applications where a failure cannot be  
tolerated. These industry-recognized 2.5 Amp rated rectifiers for working peak  
reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass  
construction using an internal “Category I” metallurgical bond. They are also  
available in surface-mount packages (see separate data sheet for 1N5802US thru  
1N5806US). Microsemi also offers numerous other rectifier products to meet higher  
and lower current ratings with various recovery time speed requirements including  
standard, fast and ultrafast in both through-hole and surface-mount packages.  
“A” Package  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
• Popular JEDEC registered 1N5802 to 1N5806 series  
• Voidless hermetically sealed glass package  
• Extremely robust construction  
• Triple-layer passivation  
• Internal “Category I” Metallurgical bonds  
• Ultrafast recovery 2.5 Amp rectifier series 50 to 150V  
• Military and other high-reliability applications  
• Switching power supplies or other applications  
requiring extremely fast switching & low forward loss  
• High forward surge current capability  
• Low thermal resistance  
• JAN, JANTX, JANTXV, and JANS available per MIL-PRF-  
• Controlled avalanche with peak reverse power  
19500/477  
capability  
• Surface mount equivalents also available in a square end-cap  
MELF configuration with “US” suffix (see separate data sheet  
for 1N5802US thru 1N5806US)  
• Inherently radiation hard as described in Microsemi  
MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
• Junction Temperature: -65oC to +175oC  
•
•
CASE: Hermetically sealed voidless hard glass  
• Storage Temperature: -65oC to +175oC  
• Average Rectified Forward Current (IO): 2.5 A @ TL = 75ºC  
• Thermal Resistance: 36 ºC/W junction to lead (L=.375 in)  
• Thermal Impedance: 4.5oC/W @ 10 ms heating time  
• Forward Surge Current: 35 Amps @ 8.3 ms half-sine  
• Capacitance: 25 pF @ VR = 10 Volts, f = 1 MHz  
• Solder temperature: 260ºC for 10 s (maximum)  
with Tungsten slugs  
TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)  
over Copper  
MARKING: Body painted and part number, etc.  
POLARITY: Cathode indicated by band  
Tape & Reel option: Standard per EIA-296  
Weight: 340 mg  
•
•
•
•
•
See package dimensions on last page  
ELECTRICAL CHARACTERISTICS  
WORKING BREAKDOWN  
AVERAGE  
RECTIFIED RECTIFIED  
CURRENT CURRENT  
AVERAGE  
MAXIMUM  
FORWARD  
VOLTAGE  
@ 1 A  
REVERSE  
CURRENT  
(MAX)  
SURGE  
CURRENT  
(MAX)  
REVERSE  
RECOVERY  
TIME (MAX)  
(NOTE 4)  
PEAK  
VOLTAGE  
(MIN.)  
REVERSE  
TYPE  
VOLTAGE  
@ 100µA  
I
@
I
@
@ V  
I
O1  
O2  
RWM  
FSM  
(8.3 ms pulse)  
VF  
V
t
IR  
(NOTE 3)  
V
TL=+75ºC  
(NOTE 1)  
AMPS  
TA=+55ºC  
(Note 2)  
AMPS  
RWM  
rr  
BR  
VOLTS  
VOLTS  
VOLTS  
AMPS  
ns  
µA  
25oC  
100oC 25oC 100oC  
1N5802  
1N5803  
1N5804  
1N5805  
1N5806  
50  
75  
55  
80  
2.5  
2.5  
2.5  
2.5  
2.5  
1.0  
1.0  
1.0  
1.0  
1.0  
0.875  
0.800  
0.800  
0.800  
1
1
1
1
1
50  
50  
50  
50  
50  
35  
35  
35  
35  
35  
25  
25  
25  
25  
25  
100  
125  
150  
110  
135  
160  
0.875  
0.875  
NOTE 1: IO1 is rated at 2.5 A @ TL = 75ºC at 3/8 inch lead length. Derate at 25 mA/ºC for TL above 75ºC.  
NOTE 2: IO2 is rated at 1.0 A @ TA = 55ºC for PC boards where thermal resistance from mounting point to  
ambient is sufficiently controlled where TJ(max) does not exceed 175ºC. Derate at 8.33 mA/ºC for TA above 55ºC.  
NOTE 3: TA = 25oC @ IO = 1.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals  
NOTE 4: I = 0.5 A, I  
= 0.5 A, I  
= .05 A  
F
RM  
R(REC)  
Copyright 2004  
7-16-2004 REV A  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12

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JANS1N5802 替代型号

型号 品牌 替代类型 描述 数据表
JANTX1N5802 MICROSEMI

类似代替

 RECTIFIERS HIGH EFFICIENCY, ESP, 2.5 AMP TO 20 AMP
1N5802US EIC

功能相似

 Fast / Super Fast Recovery Rectifiers

与JANS1N5802相关器件

型号 品牌 获取价格 描述 数据表
JANS1N5802URS MICROSEMI

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 		Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2
JANS1N5802US SEMTECH

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 		Rectifier Diode, 1 Phase, 1 Element, 2.5A, 50V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
JANS1N5802US MICROSEMI

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 		MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP
JANS1N5802US SENSITRON

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 		DESCRIPTION: 50 VOLT, AMP, 25 NS HERMETIC RECTIFIER IN A MELF-A PACKAGE.
JANS1N5803 MICROSEMI

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 		MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP
JANS1N5803US MICROSEMI

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 		MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP
JANS1N5804 MICROSEMI

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 		MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP
JANS1N5804 SENSITRON

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 		DESCRIPTION: 100 VOLT, AMP, 25 NS HERMETIC RECTIFIER IN A 106 PACKAGE.
JANS1N5804US MICROSEMI

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 		MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP
JANS1N5804US SEMTECH

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 		Rectifier Diode, 1 Phase, 1 Element, 2.5A, 100V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2

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