JANS1N5809US

更新时间： 2024-11-26 17:33:07

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
3页	38K
描述
DESCRIPTION: 100 VOLT, AMP, 30 NS HERMETIC RECTIFIER IN A MELF-B PACKAGE.

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数据手册
替代型号

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JANS1N5809US 数据手册

1N5807 / US

1N5809 / US

1N5811 / US

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 127, REV.H.2

HERMETIC AXIAL / MELF HIGH EFFICIENCY RECTIFIER

• Hermetic, non-cavity glass package

• Metallurgically bonded

• Physical dimensions: Axial lead similar to E package and surface mount similar to D-5B

• Operating and Storage Temperature: -65^oC to +175^o

MAX. RATINGS / ELECTRICAL CHARACTERISTICS All ratings are at T_A= 25^oC unless otherwise specified.

Rating

Symbol

Condition

Max

Units

WORKING PEAK REVERSE VOLTAGE

1N5807 / US

100

150

V_WM

Volts

1N5809 / US

1N5811 / US

AVERAGE RECTIFIED FORWARD CURRENT

I_o

T_L= 75 ^oC

T_A= 55 ^oC

6.0

3.0

Amps

PEAK FORWARD SURGE CURRENT

I_FSM

T_p=8.3ms

T_j= 25 ^oC

125

5.0

A(pk)

MAXIMUM REVERSE CURRENT

I_R@ V_RWM

μAmps

I_R@ V_RWM

T_j= 125 ^oC

I_FM=4.0A

525

μAmps

MAX. PEAK FORWARD VOLTAGE (PULSED)

0.875

0.925

V_FM

Volts

_FM=6.0A

300 μsec pulse, duty cycle < 2%

I_F=I_RM=0.5A

_REC=0.05A

MAXIMUM REVERSE RECOVERY TIME

T_rr

I_F=500mA

t_r=8ns

FORWARD RECOVERY VOLTAGE

V_FRM

Volts

2.2

THERMAL RESISTANCE (Axial)

1N5807 thru 1N5811

L=.375

L=0

^oC/W

Rθ_JL

Rθ_JC

THERMAL RESISTANCE (MELF)

1N5807US thru 1N5811US

6.5

• 221 West Industry Court ꢀ Deer Park, NY 11729-4681 ꢀ Phone (631) 586 7600 Fax (631) 242 9798 •

• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •

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JANS1N5809US 替代型号

型号	品牌	替代类型	描述	数据表
1N5809US	SEMTECH	功能相似	Superfast Recovery Diodes Surface Mount (US)

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JANS1N5812R	SENSITRON	获取价格	DESCRIPTION: 50 VOLT, 20 AMP, 35 NS HERMETIC RECTIFIER IN A DO-4 PACKAGE.
JANS1N5814	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN